- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄383199 > IXGH60N60 (IXYS CORP) Ultra-Low VCE(sat) IGBT(VCE(sat)為1.7V的絕緣柵雙極場效應(yīng)管) PDF資料下載
參數(shù)資料
| 型號(hào)： | IXGH60N60 |
| 廠商： | IXYS CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | Ultra-Low VCE(sat) IGBT(VCE(sat)為1.7V的絕緣柵雙極場效應(yīng)管) |
| 中文描述： | 75 A, 600 V, N-CHANNEL IGBT, TO-247AD |
| 封裝： | TO-247AD, 3 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 95K |
| 代理商： | IXGH60N60 |
1 - 4
2000 IXYS All rights reserved
TO-247 AD (IXGH)
V
CES
I
C25
V
CE(sat)
= 1.7 V
= 600 V
= 75 A
GC
E
G = Gate,
E = Emitter,
TAB = Collector
Symbol
Test Conditions
Maximum Ratings
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C90
I
CM
SSOA
(RBSOA)
T
J
= 25 C to 150 C
T
J
= 25 C to 150 C; R
GE
= 1 M
Continuous
Transient
600
600
V
V
20
30
V
V
T
C
= 25 C, limited by leads
T
C
= 90 C
T
C
= 25 C, 1 ms
V
= 15 V, T
= 125 C, R
= 10
Clamped inductive load, L = 30 H
75
60
200
A
A
A
I
= 100
@ 0.8 V
CES
A
P
C
T
J
T
JM
T
stg
M
d
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
T
C
= 25 C
300
W
-55 ... +150
C
C
C
150
-55 ... +150
Mounting torque (M3)
1.13/10
Nm/lb.in.
300
C
Weight
TO-247
TO-264
TO-268
6
g
g
g
10
4
Symbol
Test Conditions
Characteristic Values
(T
J
= 25 C, unless otherwise specified)
min.
typ.
max.
BV
CES
V
GE(th)
I
C
I
C
= 250 A, V
GE
= 0 V
= 250 A, V
CE
= V
GE
600
2.5
V
V
5
I
CES
V
CE
= 0.8 V
CES
V
GE
= 0 V
T
J
= 25 C
T
J
= 125 C
200
A
1
mA
I
GES
V
CE
= 0 V, V
GE
= 20 V
100
nA
V
CE(sat)
I
C
= I
C90
, V
GE
= 15 V
1.7
V
Features
International standard package
JEDEC TO-247 AD, TO-264, TO-268
New generation HDMOS
TM
process
Low V
for minimum on-state
conduction losses
High current handling capability
MOS Gate turn-on drive simplicity
Applications
AC motor speed control
DC servo and robot drives
DC choppers
Uninterruptible power supplies (UPS)
Switch-mode and resonant-mode
power supplies
Advantages
Easy to mount with 1 screw
(isolated mounting screw hole)
Low losses, high efficiency
High power density
High power, surface mount package
92796L (7/00)
Ultra-Low V
CE(sat)
IGBT
TO-268
(IXGT)
(TAB)
G
E
TO-264 (IXGK)
S
G
D
D (TAB)
IXGH 60N60
IXGK 60N60
IXGT 60N60
IXYS reserves the right to change limits, test conditions, and dimensions.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IXGK60N60 | Ultra-Low VCE(sat) IGBT |
| IXGJ50N60B | HiPerFAST IGBT(VCES為600V，VCE(sat)為2.5V的HiPerFAST絕緣柵雙極晶體管) |
| IXGK120N60B | HiPerFAST IGBT |
| IXGX120N60B | HiPerFAST IGBT |
| IXGK35N120C | HiPerFAST IGBT |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IXGH60N60A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 75A I(C) | TO-247 |
| IXGH60N60B2 | 功能描述:IGBT 晶體管 60 Amps 600V 1.8 V Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IXGH60N60C2 | 功能描述:IGBT 晶體管 60 Amps 600V 2.5 V Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IXGH60N60C3 | 功能描述:IGBT 晶體管 GenX3 600V IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IXGH60N60C3D1 | 功能描述:MOSFET 60 Amps 600V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。