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參數(shù)資料
| 型號： | IXGH50N60B2 |
| 廠商： | IXYS CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | HiPerFASTTM IGBT B2-Class High Speed IGBTs |
| 中文描述： | 75 A, 600 V, N-CHANNEL IGBT, TO-247AD |
| 封裝： | TO-247AD, 3 PIN |
| 文件頁數(shù)： | 4/5頁 |
| 文件大?。?/td> | 585K |
| 代理商： | IXGH50N60B2 |
IXYS reserves the right to change limits, test conditions, and dimensions.
IXGH 50N60B2
IXGT 50N60B2
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,850,072
4,835,592
4,931,844
4,881,106
5,034,796
5,017,508
5,063,307
5,049,961
5,237,481
5,187,117
5,381,025
5,486,715
6,404,065B1
6,306,728B1
6,162,665
6,259,123B1 6,306,728B1 6,683,344
6,534,343
6,583,505
Fig. 7. Transconductance
0
10
20
30
40
50
60
70
80
0
20
40
60
80
I
C
- Amperes
100 120 140 160 180 200
g
f
T
J
= -40oC
25oC
125oC
Fig. 8. Dependence of Turn-Off
Energy on R
G
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
5
10
15
20
25
30
35
40
45
50
R
G
- Ohms
E
o
-
I
C
= 20A
T
J
= 125oC
V
GE
= 15V
V
CE
= 480V
I
C
= 40A
I
C
= 80A
Fig. 9. Dependence of Turn-Off
Energy
on I
C
0
0.5
1
1.5
2
2.5
3
3.5
4
20
30
40
50
60
70
80
I
C
- Amperes
E
o
R
G
= 5
R
G
= 24.4
- - - -
V
GE
= 15V
V
CE
= 480V
T
J
= 125oC
T
J
= 25oC
Fig. 10. Dependence of Turn-Off
Energy on Temperature
0
0.5
1
1.5
2
2.5
3
3.5
4
25
35
45
55
65
75
85
95
105 115 125
T
J
- Degrees Centigrade
E
o
I
C
= 80A
R
G
= 5
R
G
= 24.4
- - -
V
GE
= 15V
V
CE
= 480V
I
C
= 40A
I
C
= 20A
Fig. 11. Dependence of Turn-Off
Switching Time on R
G
100
1000
5
10
15
20
25
30
35
40
45
50
R
G
- Ohms
S
I
C
= 40A
t
d(off)
t
fi
-
- - - - -
T
J
= 125oC
V
GE
= 15V
V
CE
= 480V
I
C
= 20A
I
C
= 80A
500
Fig. 12. Dependence of Turn-Off
Switching Time
on I
C
0
50
100
150
200
250
300
350
400
20
30
40
50
60
70
80
I
C
- Amperes
S
t
d(off)
t
fi
- - - - - -
R
G
= 5
V
GE
= 15V
V
CE
= 480V
T
J
= 125oC
T
J
= 25oC
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IXGT50N60B2 | HiPerFASTTM IGBT B2-Class High Speed IGBTs |
| IXGH60N60B2 | Optimized for 10-25 kHz hard switching and up to 100 KHz resonant switching |
| IXGT60N60B2 | Optimized for 10-25 kHz hard switching and up to 100 KHz resonant switching |
| IXGH60N60C2 | HiPerFASTTM IGBT C2-Class High Speed IGBTs |
| IXGT60N60C2 | HiPerFASTTM IGBT C2-Class High Speed IGBTs |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IXGH50N60B4 | 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:High-Gain IGBTs |
| IXGH50N60BS | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 75A I(C) | TO-247SMD |
| IXGH50N60C2 | 功能描述:IGBT 晶體管 50 Amps 600V 2.5 V Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IXGH50N60C4 | 功能描述:IGBT 模塊 High-Gain IGBTs RoHS:否 制造商:Infineon Technologies 產(chǎn)品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝: |
| IXGH50N90B2 | 功能描述:IGBT 晶體管 50 Amps 900V 2.7 Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
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