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參數(shù)資料
| 型號： | IXGH31N60U1 |
| 廠商： | IXYS CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | Ultra-Low VCE(sat) IGBT with Diode |
| 中文描述： | 40 A, 600 V, N-CHANNEL IGBT, TO-247AD |
| 文件頁數(shù)： | 2/2頁 |
| 文件大小： | 46K |
| 代理商： | IXGH31N60U1 |
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
IXYS reserves the right to change limits, test conditions, and dimensions.
IXGH 31N60U1
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
typ.
max.
g
fs
I
Pulse test, t
≤
300
μ
s, duty cycle
≤
2 %
= I
; V
CE
= 10 V,
9
14
S
C
ies
C
oes
C
res
1500
170
pF
pF
pF
V
CE
= 25 V, V
GE
= 0 V, f = 1 MHz
40
Q
g
Q
ge
Q
gc
80
15
30
100
30
40
nC
nC
nC
I
C
= I
C90
, V
GE
= 15 V, V
CE
= 0.5 V
CES
t
d(on)
t
ri
t
d(off)
t
fi
E
off
50
ns
ns
ns
ns
mJ
160
700
800
12
1100
1100
t
d(on)
t
ri
E
on
t
d(off)
t
fi
E
off
50
ns
ns
mJ
ns
ns
mJ
160
2
850
1700
19
R
thJC
R
thCK
0.83 K/W
0.25
K/W
Reverse Diode (FRED)
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
Symbol
Test Conditions
typ.
max.
V
F
I
= I
, V
= 0 V,
Pulse test, t
≤
300
μ
s, duty cycle d
≤
2 %
1.6
V
I
RM
t
rr
I
F
= I
, V
GE
= 0 V, -di
F
/dt = 240 A/
μ
s
V
= 360 V
I
F
= 1 A; -di/dt = 100 A/
μ
s; V
R
= 30 V T
J
= 25
°
C
10
15
A
ns
ns
T
J
=125
°
C
120
35
50
R
thJC
1 K/W
TO-247 AD Outline
Inductive load, T
J
= 25
°
C
I
C
= I
, V
GE
= 15 V, L = 100
μ
H,
V
CE
= 0.8 V
CES
, R
G
= R
off
= 10
Remarks: Switching times may increase
for V
(Clamp) > 0.8 V
CES
, higher T
J
or
increased R
G
1 = Gate
2 = Collector
3 = Emitter
Tab = Collector
Inductive load, T
J
= 125
°
C
I
C
= I
C90
, V
GE
= 15 V, L = 100
μ
H
V
CE
= 0.8 V
CES
, R
G
= R
off
= 10
Remarks: Switching times may increase
for V
(Clamp) > 0.8 V
CES
, higher T
J
or
increased R
G
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