參數(shù)資料
型號： IXGH12N60CD1
廠商： IXYS CORP
元件分類： 功率晶體管
英文描述： HiPerFASTTM IGBT LightspeedTM Series
中文描述： 24 A, 600 V, N-CHANNEL IGBT, TO-247AD
封裝： TO-247AD, 3 PIN
文件頁數(shù)： 2/2頁
文件大?。?/td> 61K
代理商： IXGH12N60CD1
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
6,306,728B1
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
typ.
max.
g
fs
I
C
Pulse test, t
≤
300
μ
s, duty cycle
≤
2 %
= I
C90
; V
CE
= 10 V,
5
11
S
C
ies
C
oes
C
res
860
pF
V
CE
= 25 V, V
GE
= 0 V, f = 1 MHz
100
pF
15
pF
Q
g
Q
ge
Q
gc
32
nC
I
C
= I
C90
, V
GE
= 15 V, V
CE
= 0.5 V
CES
10
nC
10
nC
t
d(on)
t
ri
t
d(off)
t
fi
E
off
20
ns
20
ns
60
ns
55
ns
0.09
mJ
t
d(on)
t
ri
E
on
t
d(off)
t
fi
E
off
20
ns
20
ns
0.5
mJ
85
180
ns
85
180
ns
0.27
0.60
mJ
R
thJC
R
thCK
IGBT
1.25
K/W
0.25
K/W
Inductive load, T
J
= 25
°
C
I
C
= I
C90
, V
GE
= 15 V, L = 300
μ
H
V
CE
= 0.8 V
CES
, R
G
= R
off
= 18
Remarks: Switching times may increase
for V
CE
(Clamp) > 0.8 V
CES
, higher T
J
or
increased R
G
Inductive load, T
J
= 125
°
C
I
C
= I
C90
, V
GE
= 15 V, L = 300
μ
H
V
CE
= 0.8 V
CES
, R
G
= R
off
= 18
Remarks: Switching times may increase
for V
CE
(Clamp) > 0.8 V
CES
, higher T
J
or
increased R
G
TO-247 AD Outline
Dim.
Millimeter
Min.
Inches
Min.
Max.
Max.
A
A
1
A
2
b
b
1
b
2
C
D
E
4.7
2.2
2.2
5.3
2.54
2.6
.185
.087
.059
.209
.102
.098
1.0
1.65
2.87
1.4
2.13
3.12
.040
.065
.113
.055
.084
.123
.4
.8
.016
.819
.610
.031
.845
.640
20.80
15.75
21.46
16.26
e
L
L1
P
Q
5.20
19.81
5.72
20.32
4.50
0.205 0.225
.780
.800
.177
3.55
5.89
3.65
6.40
.140
0.232 0.252
.144
R
S
4.32
6.15 BSC
5.49
.170
242 BSC
.216
e
P
Reverse Diode (FRED)
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
Symbol
Test Conditions
typ.
max.
V
F
I
= 15A; T
VJ
= 150
°
C
T
VJ
= 25
°
C
1.7
V
V
2.5
I
RM
V
= 100 V; I
=25A; -di
F
/dt = 100 A/
μ
s
L < 0.05
μ
H
; T
VJ
= 100
°
C
2
2.5
A
t
rr
I
F
= 1 A; -di/dt = 50 A/
μ
s;
V
R
= 30 V T
J
= 25
°
C
35
ns
R
thJC
Diode
1.6 K/W
IXGH 12N60CD1
相關(guān)PDF資料
PDF描述
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IXGH12N90C 功能描述:IGBT 晶體管 24 Amps 900V 3 Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
IXGH12N90C_03 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:HiPerFAST IGBT Lightspeed Series
IXGH14N170A 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:High Voltage IGBT
IXGH15N120B 功能描述:IGBT 晶體管 30 Amps 1200V 3.2 Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
IXGH15N120B2D1 功能描述:IGBT 晶體管 30 Amps 1200V 2.7 V Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
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