參數(shù)資料
型號： IXFX15N100
廠商： IXYS CORP
元件分類： 功率晶體管
英文描述： HiPerFET Power MOSFETs
中文描述： 15 A, 1000 V, 0.7 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： PLUS247, 3 PIN
文件頁數(shù)： 1/4頁
文件大?。?/td> 116K
代理商： IXFX15N100
1 - 4
2000 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
DSS
V
DGR
V
GS
V
GSM
I
D25
T
J
= 25 C to 150 C
T
J
= 25 C to 150 C; R
GS
= 1 M
Continuous
Transient
1000
1000
V
V
20
30
V
V
T
C
= 25 C
14N100
15N100
14N100
15N100
14N100
15N100
14
15
56
60
14
15
A
A
A
A
A
A
I
DM
T
C
= 25 C, pulse width limited by T
JM
I
AR
T
C
= 25 C
E
AR
dv/dt
T
C
= 25 C
I
S
I
, di/dt 100 A/ s, V
DD
V
DSS
,
T
J
150 C, R
G
= 2
T
C
= 25 C
45
mJ
5
V/ns
P
D
T
J
T
JM
T
stg
T
L
M
d
Weight
360
W
-55 ... +150
C
C
C
150
-55 ... +150
1.6 mm (0.062 in.) from case for 10 s
300
C
Mounting torque
1.13/10 Nm/lb.in.
6
g
Symbol
Test Conditions
Characteristic Values
(T
J
= 25 C, unless otherwise specified)
min.
typ.
max.
V
DSS
V
GS(th)
V
GS
= 0 V, I
D
= 1 mA
V
DS
= V
GS
, I
D
= 4 mA
1000
2.5
V
V
4.5
I
GSS
V
GS
= 20 V
DC
, V
DS
= 0
100
nA
I
DSS
V
DS
= 0.8 V
DSS
V
GS
= 0 V
T
J
=
T
J
= 125 C
25 C
250
A
1
mA
R
DS(on)
V
GS
= 10 V, I
D
= 0.5 I
D25
14N100
15N100
0.75
0.70
Pulse test, t 300 s, duty cycle d 2 %
N-Channel Enhancement Mode
High dv/dt, Low t
rr
, HDMOS
TM
Family
TO-247 AD
(IXFH)
Features
G
International standard packages
G
Low R
HDMOS
TM
process
G
Rugged polysilicon gate cell structure
G
Unclamped Inductive Switching (UIS)
rated
G
Low package inductance
- easy to drive and to protect
G
Fast intrinsic Rectifier
Applications
G
DC-DC converters
G
Battery chargers
G
Switched-mode and resonant-mode
power supplies
G
DC choppers
G
AC motor control
G
Temperature and lighting controls
Advantages
G
Easy to mount with 1 screw (TO-247)
(isolated mounting screw hole) or
mounting clip or spring (PLUS 247
TM
)
G
High power surface mountable package
G
High power density
V
DSS
I
D25
R
DS(on)
IXFH/IXFT/IXFX14
N100 1000 V
IXFH/IXFT/IXFX15
N100 1000 V
14 A 0.75
15 A 0.70
t
rr
200 ns
(TAB)
HiPerFET
TM
Power MOSFETs
97535B (1/99)
PLUS 247
TM
(IXFX)
G
D
Preliminary data sheet
TO-268 (D3)
(IXFT)
(TAB)
G
S
(TAB)
IXYS reserves the right to change limits, test conditions, and dimensions.
相關(guān)PDF資料
PDF描述
IXFH14N80 HiPerFET Power MOSFETs
IXFH14N60 HIPERFET Power MOSFTETs
IXFH15N100Q N-Channel Enhancement Mode HiPerFET Power MOSFET(最大漏源擊穿電壓1000V,導(dǎo)通電阻0.725Ω的N溝道增強(qiáng)型HiPerFET功率MOSFET)
IXFH15N80 HiPerFET Power MOSFETs
IXFH15N60 HiPerFET Power MOSFETs
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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