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參數(shù)資料
| 型號(hào)： | IXFT80N10 |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 80A I(D) | TO-268 |
| 中文描述： | 晶體管| MOSFET的| N溝道| 100V的五（巴西）直| 80A條（?。﹟至268 |
| 文件頁數(shù)： | 2/2頁 |
| 文件大小： | 90K |
| 代理商： | IXFT80N10 |
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
IXYS reserves the right to change limits, test conditions, and dimensions.
IXFH 80N10
IXFT 80N10
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
typ.
max.
g
fs
V
DS
= 10 V; I
D
= 0.5 I
D25
, pulse test
35
55
S
C
iss
C
oss
C
rss
4800
1460
490
pF
pF
pF
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
t
d(on)
t
r
t
d(off)
t
f
41
63
90
26
ns
ns
ns
ns
V
GS
R
G
= 2.5
(External),
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
Q
g(on)
Q
gs
Q
gd
180
38
65
nC
nC
nC
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
R
thJC
R
thCK
0.42
K/W
K/W
(TO-247)
0.25
Source-Drain Diode
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
Symbol
Test Conditions
typ.
max.
I
S
V
GS
= 0 V
80
A
I
SM
Repetitive; pulse width limited by T
JM
320
A
V
SD
I
= I
, V
= 0 V,
Pulse test, t
≤
300
μ
s, duty cycle d
≤
2 %
1.5
V
t
rr
Q
RM
I
RM
200
ns
μ
C
I
F
= 25A, -di/dt = 100 A/
μ
s, V
R
= 50 V
0.5
6
A
TO-268 Outline
Dim.
Millimeter
Min.
Inches
Min.
Max.
Max.
A
A
1
A
2
4.7
2.2
2.2
5.3
2.54
2.6
.185
.087
.059
.209
.102
.098
b
b
1
b
2
1.0
1.65
2.87
1.4
2.13
3.12
.040
.065
.113
.055
.084
.123
C
D
E
.4
.8
.016
.819
.610
.031
.845
.640
20.80
15.75
21.46
16.26
e
L
L1
5.20
19.81
5.72
20.32
4.50
0.205
.780
0.225
.800
.177
P
Q
3.55
5.89
3.65
6.40
.140
0.232
.144
0.252
R
S
4.32
6.15
5.49
.170
242
.216
BSC
BSC
Terminals:
1 - Gate
2 - Drain
3 - Source
Tab - Drain
1 2 3
TO-247 AD (IXFH) Outline
Terminals: 1 - Gate
2 - Drain
Tab - Drain
3 - Source
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IXFH80N10 | TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 80A I(D) | TO-247AD |
| IXFX180N085 | TRANSISTOR | MOSFET | N-CHANNEL | 85V V(BR)DSS | 180A I(D) | TO-247VAR |
| IXFX180N10 | TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 180A I(D) | TO-247VAR |
| IXFK180N085 | TRANSISTOR | MOSFET | N-CHANNEL | 85V V(BR)DSS | 180A I(D) | TO-264AA |
| IXFK180N10 | TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 180A I(D) | TO-264AA |
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參數(shù)描述 |
|---|---|
| IXFT80N10Q | 功能描述:MOSFET 80 Amps 100V 0.015 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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| IXFT86N30T | 功能描述:MOSFET TRENCH HIPERFET PWR MOSFET 300V 86A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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