參數(shù)資料
型號(hào): IXFN32N60
廠商: IXYS CORP
元件分類: JFETs
英文描述: HiPerFET Power MOSFET
中文描述: 32 A, 600 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: SOT-227B, MINIBLOC-4
文件頁(yè)數(shù): 4/4頁(yè)
文件大小: 192K
代理商: IXFN32N60
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
IXYS reserves the right to change limits, test conditions, and dimensions.
IXFK 32N60
IXFK 36N60
IXFN 32N60
IXFN 36N60
相關(guān)PDF資料
PDF描述
IXFN340N07 HiPerFET Power MOSFETs Single Die MOSFET
IXFN340N06 HiPerFET Power MOSFETs Single Die MOSFET
IXFN34N100 HiPerFET Power MOSFETs Single Die MOSFET
IXFN34N80 HiPerFETTM Power MOSFETs Single DieMOSFET
IXFN36N100 HiPerFET Power MOSFETs Single Die MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IXFN32N80P 功能描述:MOSFET 29 Amps 800V 0.27 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXFN340N06 功能描述:MOSFET 340 Amps 60V 0.003 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXFN340N07 功能描述:MOSFET HiperFET Pwr MOSFET 70V, 340A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXFN340N07_04 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:HiPerFET⑩ Power MOSFETs Single Die MOSFET
IXFN34N100 功能描述:MOSFET 34 Amps 1000V 0.28 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube