- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄383193 > IXFM13N80 (IXYS CORP) HiPerFET Power MOSFETs PDF資料下載
參數(shù)資料
| 型號： | IXFM13N80 |
| 廠商： | IXYS CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | HiPerFET Power MOSFETs |
| 中文描述： | 13 A, 800 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204 |
| 封裝： | TO-204, 2 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 95K |
| 代理商： | IXFM13N80 |
1 - 4
2000 IXYS All rights reserved
IXYS reserves the right to change limits, test conditions, and dimensions.
Symbol
Test Conditions
Maximum Ratings
V
DSS
V
DGR
V
GS
V
GSM
I
D25
T
J
= 25 C to 150 C
T
J
= 25 C to 150 C; R
GS
= 1 M
Continuous
Transient
800
800
V
V
20
30
V
V
T
C
= 25 C
11N80
13N80
11N80
13N80
11N80
13N80
11
13
44
52
11
13
A
A
A
A
A
A
I
DM
T
C
= 25 C, pulse width limited by T
JM
I
AR
T
C
= 25 C
E
AR
dv/dt
T
C
= 25 C
I
S
I
, di/dt 100 A/ s, V
DD
V
DSS
,
T
J
150 C, R
G
= 2
T
C
= 25 C
30
mJ
5
V/ns
P
D
T
J
T
JM
T
stg
T
L
M
d
Weight
300
W
-55 ... +150
C
C
C
150
-55 ... +150
1.6 mm (0.062 in.) from case for 10 s
300
C
Mounting torque
1.13/10 Nm/lb.in.
TO-204 = 18 g, TO-247 = 6 g
HiPerFET
TM
Power MOSFETs
N-Channel Enhancement Mode
High dv/dt, Low t
rr
, HDMOS
TM
Family
TO-247 AD (IXFH)
TO-204 AA (IXFM)
G = Gate,
S = Source,
D = Drain,
TAB = Drain
Features
International standard packages
Low R
HDMOS
TM
process
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Fast intrinsic Rectifier
Applications
DC-DC converters
Synchronous rectification
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
AC motor control
Temperature and lighting controls
Low voltage relays
Advantages
Easy to mount with 1 screw (TO-247)
(isolated mounting screw hole)
Space savings
High power density
D
G
V
DSS
800 V
800 V
t
rr
I
D25
11 A
13 A
250 ns
R
DS(on)
0.95
0.80
IXFH/IXFM
11
N80
IXFH/IXFM
13
N80
Symbol
Test Conditions
Characteristic Values
(T
J
= 25 C, unless otherwise specified)
min.
typ.
max.
V
DSS
V
GS(th)
V
GS
= 0 V, I
D
= 3 mA
V
DS
= V
GS
, I
D
= 4 mA
800
2.0
V
V
4.5
I
GSS
V
GS
= 20 V
DC
, V
DS
= 0
100
nA
I
DSS
V
DS
= 0.8 V
DSS
V
GS
= 0 V
T
J
=
T
J
= 125 C
25 C
250
A
1
mA
R
DS(on)
V
GS
= 10 V, I
D
= 0.5 I
D25
11N80
13N80
0.95
0.80
Pulse test, t 300 s, duty cycle d 2 %
91528F(7/97)
(TAB)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IXFM11N100 | HIPERFET Power MOSFTETs |
| IXFM11N60 | HIPERFET Power MOSFTETs |
| IXFM11N90 | HIPERFET Power MOSFTETs |
| IXFM13N50 | HIPERFET Power MOSFTETs |
| IXFM13N65 | HIPERFET Power MOSFTETs |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IXFM13N90 | 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:HIPERFET Power MOSFTETs |
| IXFM14N80 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 14A I(D) | TO-204AE |
| IXFM15N60 | 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:HIPERFET Power MOSFTETs |
| IXFM15N65 | 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:HIPERFET Power MOSFTETs |
| IXFM15N80 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 15A I(D) | TO-204AE |
發(fā)布緊急采購，3分鐘左右您將得到回復。