參數(shù)資料
型號: IXFK21N100F
廠商: IXYS CORP
元件分類: JFETs
英文描述: HiPerRF Power MOSFETs F-Class: MegaHertz Switching
中文描述: 21 A, 1000 V, 0.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
封裝: PLASTIC, TO-264, 3 PIN
文件頁數(shù): 2/2頁
文件大小: 98K
代理商: IXFK21N100F
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
6,306,728B1
IXYS reserves the right to change limits, test conditions, and dimensions.
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
typ.
max.
g
fs
V
DS
= 10 V; I
D
= 0.5 I
D25
Note 1
15
32
S
C
iss
C
oss
C
rss
5500
pF
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
640
pF
190
pF
t
d(on)
t
r
t
d(off)
t
f
21
ns
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
R
G
= 1
(External)
16
ns
55
ns
15
ns
Q
g(on)
Q
gs
Q
gd
160
nC
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
35
nC
77
nC
R
thJC
R
thCK
0.26 K/W
0.15
K/W
Source-Drain Diode
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
Symbol
Test Conditions
typ.
max.
I
S
V
GS
= 0 V
21
A
I
SM
Repetitive;
pulse width limited by T
JM
84
A
V
SD
I
F
= I
S
, V
GS
= 0 V, Note 1
1.5
V
t
rr
250
ns
Q
RM
1.4
μ
C
I
RM
10
A
I
F
= 25 A,-di/dt = 100 A/
μ
s, V
R
= 100 V
Dim.
Millimeter
Min.
Inches
Min.
Max.
Max.
A
A
1
A
2
b
b
1
b
2
C
D
E
4.83
2.29
1.91
5.21
2.54
2.16
.190
.090
.075
.205
.100
.085
1.14
1.91
2.92
1.40
2.13
3.12
.045
.075
.115
.055
.084
.123
0.61
20.80
15.75
0.80
21.34
16.13
.024
.819
.620
.031
.840
.635
e
L
L1
5.45 BSC
19.81
3.81
.215 BSC
.780
.150
20.32
4.32
.800
.170
Q
R
5.59
4.32
6.20
4.83
.220 0.244
.170
.190
Terminals:
1 - Gate
2 - Drain (Collector)
3 - Source (Emitter)
4 - Drain (Collector)
PLUS 247
TM
Outline
Note: 1. Pulse test, t
300
μ
s, duty cycle d
2 %
IXFK 21N100F
IXFX 21N100F
TO-264 AA Outline
Millimeter
Min.
Inches
Max.
Min.
Max.
A
A1
A2
b
b1
b2
c
D
E
e
J
K
L
L1
P
Q
Q1
R
R1
S
T
4.82
2.54
2.00
1.12
2.39
2.90
0.53
25.91
19.81
5.13
2.89
2.10
1.42
2.69
3.09
0.83
26.16
19.96
.190
.100
.079
.044
.094
.114
.021
1.020
.780
.202
.114
.083
.056
.106
.122
.033
1.030
.786
5.46 BSC
0.00
0.00
20.32
2.29
3.17
6.07
8.38
3.81
1.78
6.04
1.57
.215 BSC
.000
.000
.800
.090
.125
.239
.330
.150
.070
.238
.062
0.25
0.25
20.83
2.59
3.66
6.27
8.69
4.32
2.29
6.30
1.83
.010
.010
.820
.102
.144
.247
.342
.170
.090
.248
.072
Dim.
相關PDF資料
PDF描述
IXFX21N100F HiPerRF Power MOSFETs F-Class: MegaHertz Switching
IXFK21N100Q N-Channel Enhancement Mode HiPerFET Power MOSFET(最大漏源擊穿電壓1000V,導通電阻0.50Ω的N溝道增強型HiPerFET功率MOSFET)
IXFK24N100 HiPerRF Power MOSFETs
IXFK24N100F HiPerRF Power MOSFETs
IXFX24N100F HiPerRF Power MOSFETs
相關代理商/技術參數(shù)
參數(shù)描述
IXFK21N100Q 功能描述:MOSFET 21 Amps 1000V 0.5 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXFK220N15P 功能描述:MOSFET 220Amps 150V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXFK220N17T2 功能描述:MOSFET GigaMOS Trench T2 HiperFET Pwr MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXFK230N20T 功能描述:MOSFET 230A 200V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXFK240N15T2 功能描述:功率驅動器IC GigaMOS Trench T2 HiperFET PWR MOSFET RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube