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參數(shù)資料
| 型號(hào)： | IXBH9N140 |
| 英文描述： | TRANSISTOR | IGBT | N-CHAN | 1.4KV V(BR)CES | 9A I(C) | TO-247AD |
| 中文描述： | 晶體管| IGBT的|正陳| 1.4KV五（巴西）國(guó)際消費(fèi)電子展| 9A條一（c）|采用TO - 247AD |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大小： | 62K |
| 代理商： | IXBH9N140 |
2000 IXYS All rights reserved
C4 - 6
Features
International standard package
JEDEC TO-247 AD
High Voltage BIMOSFET
TM
- replaces high voltage Darlingtons
and series connected MOSFETs
- lower effective R
Monolithic construction
- high blocking voltage capability
- very fast turn-off characteristics
MOS Gate turn-on
- drive simplicity
Reverse conducting capability
Applications
Flyback converters
DC choppers
Uninterruptible power supplies (UPS)
Switched-mode and resonant-mode
power supplies
CRT deflection
Lamp ballasts
Advantages
Easy to mount with 1 screw
(isolated mounting screw hole)
Space savings
High power density
High Voltage BIMOSFET
TM
Monolithic Bipolar
MOS Transistor
N-Channel, Enhancement Mode
IXBH 9N140
IXBH 9N160
V
CES
I
C25
V
CE(sat)
= 4.9 V
typ.
t
fi
= 40 ns
= 1400/1600
V
= 9 A
TO-247 AD
G
C
E
G = Gate,
E = Emitter,
C = Collector,
TAB = Collector
C (TAB)
C
E
G
Symbol
Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
typ.
max.
BV
CES
I
C
= 1 mA, V
GE
= 0 V
9N140
9N160
1400
1600
V
V
V
V
GE(th)
I
C
= 0.5 mA, V
CE
= V
GE
4
8
I
CES
V
CE
= 0.8
V
CES
V
GE
= 0 V
T
J
= 25
°
C
T
J
=125
°
C
100
μ
A
mA
0.1
I
GES
V
CE
= 0 V, V
GE
=
±
20 V
±
500
nA
V
CE(sat)
I
C
= I
C90
, V
GE
= 15 V
4.9
5.6
7
V
V
T
J
=125
°
C
Symbol
Conditions
Maximum Ratings
9N140
9N160
V
CES
V
CGR
T
J
= 25
°
C to 150
°
C
T
J
= 25
°
C to 150
°
C; R
GE
= 1 M
1400
1400
1600
1600
V
V
V
GES
V
GEM
Continuous
Transient
±
20
±
30
V
V
I
C25
I
C90
I
CM
T
C
= 25
°
C,
T
C
= 90
°
C
T
C
= 25
°
C, 1 ms
V
= 15 V, T
= 125
°
C, R
= 100
V
CE
= 0.8
V
CES
I
CM
= 12
Clamped inductive load, L = 100
μ
H
9
5
A
A
A
10
SSOA
(RBSOA)
A
P
C
T
C
= 25
°
C
100
W
T
J
T
JM
T
stg
T
L
-55 ... +150
°
C
°
C
°
C
°
C
150
-55 ... +150
1.6 mm (0.063 in) from case for 10 s
300
M
d
Mounting torque
1.15/10 Nm/lb.in.
Weight
6
g
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| IXBH9N140G | 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:High Voltage BIMOSFET Monolithic Bipolar MOS Transistor |
| IXBH9N160 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 1.6KV V(BR)CES | 9A I(C) | TO-247AD |
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| IXBK64N250 | 功能描述:功率驅(qū)動(dòng)器IC BIMOSFET 2500V 75A RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時(shí)間: 下降時(shí)間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
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