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參數(shù)資料
| 型號： | IW4023BD |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | Triple 3-Input NAND Gate |
| 中文描述： | 三3輸入與非門 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 208K |
| 代理商： | IW4023BD |
IW4023B
MAXIMUM RATINGS
*
Symbol
Parameter
Value
Unit
V
CC
V
IN
V
OUT
I
IN
DC Supply Voltage (Referenced to GND)
-0.5 to +20
V
DC Input Voltage (Referenced to GND)
-0.5 to V
CC
+0.5
-0.5 to V
CC
+0.5
±
10
V
DC Output Voltage (Referenced to GND)
V
DC Input Current, per Pin
mA
P
D
Power Dissipation in Still Air, Plastic DIP+
SOIC Package+
750
500
mW
P
D
Tstg
Power Dissipation per Output Transistor
100
mW
°
C
°
C
Storage Temperature
-65 to +150
T
L
Lead Temperature, 1 mm from Case for 10 Seconds
(Plastic DIP or SOIC Package)
260
*
Maximum Ratings are those values beyond which damage to the device may occur.
Functional operation should be restricted to the Recommended Operating Conditions.
+Derating - Plastic DIP: - 10 mW/
°
C from 65
°
to 125
°
C
SOIC Package: : - 7 mW/
°
C from 65
°
to 125
°
C
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
Min
Max
Unit
V
CC
DC Supply Voltage (Referenced to GND)
3.0
18
V
V
IN
, V
OUT
T
A
DC Input Voltage, Output Voltage (Referenced to GND)
0
V
CC
+125
V
°
C
Operating Temperature, All Package Types
-55
This device contains protection circuitry to guard against damage due to high static voltages or electric fields.
However, precautions must be taken to avoid applications of any voltage higher than maximum rated voltages to this
high-impedance circuit. For proper operation, V
IN
and V
OUT
should be constrained to the range GND
≤
(V
IN
or
V
OUT
)
≤
V
CC
.
Unused inputs must always be tied to an appropriate logic voltage level (e.g., either GND or V
CC
). Unused
outputs must be left open.
2
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