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參數(shù)資料
| 型號： | ITT2303GJ |
| 元件分類： | 放大器 |
| 英文描述： | 2200 MHz - 2600 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER |
| 封裝： | PLASTIC, FULL DOWNSET MSOP-8 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 61K |
| 代理商： | ITT2303GJ |
RF Power Amplifier IC for 2.4 GHz ISM
ITT2303GJ
902536 G
, November 1999
GaAsTEK
5310 Valley Park Drive
Roanoke, VA 24019 USA
www.gaastek.com
Tel:
1-540-563-3949
1-888-563-3949 (USA)
Fax: 1-540-563-8616
2
TYPICAL CHARACTERISTICS
0
10
20
30
40
50
60
-10
-5
0
5
PIN (dBm)
P
OU
T(d
B
m
),
P
A
E
(
%
)
50
100
150
200
250
300
350
IDD
(m
A
)
POUT
IDD
PAE
VDD1,2,3 = 3.3V
f = 2450 MHz
0
2
4
6
8
10
12
-10
-5
0
5
PIN (dBm)
P
OU
T
(d
B
m
),
P
A
E
(%
)
50
100
150
200
250
300
350
I DD
(m
A
)
POUT
IDD
PAE
VDD1,2 = 3.3V
VDD3 = 0.0V
f = 2450 MHz
Figure 1. Output power, drain current and efficiency vs.
input power
Figure 2. Output power and drain current vs. input
power for low current “bypass” mode (VDD1,2=3.3V
VDD3=0.0V)
0
10
20
30
40
50
60
123
45
VDD (V)
P
o
u
t(d
B
m
),
P
A
E
(%
)
0.100
0.150
0.200
0.250
0.300
0.350
0.400
I DD
(A
)
POUT
PAE
IDD
PIN = -2 dBm
f = 2450 MHz
0
5
10
15
20
25
30
01
2
3
VDD1 (V)
P
OU
T
(d
B
m
),
I
DD1
(m
A
)
100
150
200
250
300
350
400
I DD2
+I
DD3
(m
A
)
POUT
IDD2,3
IDD1
VDD2,3 = 3.3V
f = 2450 MHz
Figure 3. Output power, drain current and efficiency
vs. supply voltage
Figure 4. Output power, drain current and efficiency
vs. VDD1 for power control
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| ITT2303GJ-BLK | 制造商:M/A-COM Technology Solutions 功能描述:2.45GHZ MMIC MARK:AEPO( MARKED 2303GJ-R13 ) - Bulk |
| ITT2-AR | 制造商:FUJITSU Component Ltd 功能描述: 制造商:FUJITSU 功能描述: |
| ITT2B-AH | 制造商:FUJITSU Component Ltd 功能描述: 制造商:FUJITSU 功能描述: |
| ITT2B-AR | 制造商:FUJITSU Component Ltd 功能描述: |
| ITT2B-BH | 制造商:FUJITSU 功能描述: |
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