參數(shù)資料
型號： ITF87068SQT
廠商： Intersil Corporation
英文描述： 9A, 20V, 0.015 Ohm, P-Channel, 2.5V Specified Power MOSFET(9A, 20V, 0.015Ω P溝道2.5V專用功率MOS場效應管)
中文描述： 第9A，20V的，0.015歐姆，P溝道，2.5V的指定功率MOSFET（第9A，20V的，0.015ΩP溝道2.5V的專用功率馬鞍山場效應管）
文件頁數(shù)： 8/12頁
文件大?。?/td> 197K
代理商： ITF87068SQT
8
PSPICE Electrical Model
.SUBCKT ITF87068SQ 2 1 3 ;
REV 25 Jan 2000
CA 12 8 2.8e-9
CB 15 14 2.8e-9
CIN 6 8 2.7e-9
DBODY 5 7 DBODYMOD
DBREAK 7 11 DBREAKMOD
DESD1 91 9 DESD1MOD
DESD2 91 7 DESD2MOD
DPLCAP 10 6 DPLCAPMOD
EBREAK 5 11 17 18 -31.3
EDS 14 8 5 8 1
EGS 13 8 6 8 1
ESG 5 10 8 6 1
EVTHRES 6 21 19 8 1
EVTEMP 6 20 18 22 1
IT 8 17 1
LDRAIN 2 5 1.0e-9
LGATE 1 9 4.4e-9
LSOURCE 3 7 4.5e-9
MMED 16 6 8 8 MMEDMOD
MSTRO 16 6 8 8 MSTROMOD
MWEAK 16 21 8 8 MWEAKMOD
RBREAK 17 18 RBREAKMOD 1
RDRAIN 50 16 RDRAINMOD 5.8e-3
RGATE 9 20 3.5
RLDRAIN 2 5 10
RLGATE 1 9 9 44
RLSOURCE 3 7 45
RSLC1 5 51 RSLCMOD 1e-6
RSLC2 5 50 1e3
RSOURCE 8 7 RSOURCEMOD 3.2e-3
RVTHRES 22 8 RVTHRESMOD 1
RVTEMP 18 19 RVTEMPMOD 1
S1A 6 12 13 8 S1AMOD
S1B 13 12 13 8 S1BMOD
S2A 6 15 14 13 S2AMOD
S2B 13 15 14 13 S2BMOD
VBAT 22 19 DC 1
ESLC 51 50 VALUE={(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)/(1e-6*200),2.8))}
.MODEL DBODYMOD D (IS = 2.8e-10 RS = 4.7e-3 TRS1 = 1.75e-3 TRS2 = -1.0e-6 N = 1.08 IKF = 0.8 CJO = 1.2e-9 TT = 1.0e-9 M = 0.5)
.MODEL DBREAKMOD D (RS = 3.5e-1 TRS1 = 1.0e-3 TRS2 = -2.0e-5)
.MODEL DESD1MOD D (BV=12.2 TBV1= -2.0e-3 RS=35 N=12.4)
.MODEL DESD2MOD D (BV=12.4 TBV1= -2.0e-3 RS=35 N=12.5)
.MODEL DPLCAPMOD D (CJO = 1.25e-9 IS = 1e-30 N=10 VJ=0.39 M = 0.41)
.MODEL MMEDMOD PMOS (VTO = -1.0 KP = 35 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 3.5 RS = 0.1)
.MODEL MSTROMOD PMOS (VTO = -1.16 KP = 100 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u)
.MODEL MWEAKMOD PMOS (VTO = -0.7 KP = 0.1 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 35 RS = 0.1)
.MODEL RBREAKMOD RES (TC1 = 6.3e-4 TC2 = -5.0E-7)
.MODEL RDRAINMOD RES (TC1 = 5.0e-3 TC2 = 1.2e-6)
.MODEL RSLCMOD RES (TC1 = 1.0e-3 TC2 = 1.0e-6)
.MODEL RSOURCEMOD RES (TC1 = 1e-3 TC2 = 1e-6)
.MODEL RVTHRESMOD RES (TC1 = 1.2e-3 TC2 = 4.9e-6)
.MODEL RVTEMPMOD RES (TC1 = -3.3e-4 TC2 = -1.0e-7)
.MODEL S1AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 2.5 VOFF= 1.5)
.MODEL S1BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 1.5 VOFF= 2.5)
.MODEL S2AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 0.75 VOFF= -0.5)
.MODEL S2BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -0.5 VOFF= 0.75)
.ENDS
NOTE: For further discussion of the PSPICE model, consult
A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global
Temperature Options
; IEEE Power Electronics Specialist Conference Records, 1991, written by William J. Hepp and C. Frank Wheatley.
18
22
-
+
+
-
5
51
+
-
19
8
+
-
17
18
6
8
+
-
5
8
+
-
RBREAK
RVTEMP
VBAT
RVTHRES
IT
17
18
19
22
12
13
15
S1A
S1B
S2A
S2B
CA
CB
EGS
EDS
14
8
13
8
14
13
MWEAK
DBODY
RSOURCE
SOURCE
3
11
7
LSOURCE
RLSOURCE
CIN
RDRAIN
EVTHRES
16
21
8
MMED
MSTRO
DRAIN
2
LDRAIN
RLDRAIN
DBREAK
DPLCAP
ESLC
RSLC1
51
10
5
50
RSLC2
1
GATE
RGATE
EVTEMP
9
ESG
8
6
LGATE
RLGATE
20
+
-
+
-
EBREAK
DESD1
91
DESD2
6
ITF87068SQT
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