參數資料
型號： ITF87056DQT
廠商： Intersil Corporation
英文描述： 5A, 20V, 0.045 Ohm, Dual P-Channel, 2.5V Specified Power MOSFET
中文描述： 第5A，20V的，0.045歐姆，雙P溝道，2.5V的指定功率MOSFET
文件頁數： 2/13頁
文件大?。?/td> 226K
代理商： ITF87056DQT
2
Electrical Specifications
T
A
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
OFF STATE SPECIFICATIONS
Drain to Source Breakdown Voltage
BV
DSS
I
D
= 250
μ
A, V
GS
= 0V Figure 11
-20
-
-
V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= -20V, V
GS
= 0V
-
-
-10
μ
A
Gate to Source Leakage Current
I
GSS
V
GS
=
±
12V
-
-
±
10
μ
A
ON STATE SPECIFICATIONS
Gate to Source Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 250
μ
A Figure 10
-0.5
-
-1.5
V
Drain to Source On Resistance
r
DS(ON)
I
D
= 5.0A, V
GS
= -4.5V Figures 8, 9
-
0.037
0.045
I
D
= 3.0A, V
GS
= -4.0V Figure 8
-
0.039
0.048
I
D
= 2.5A, V
GS
= -2.5V Figure 8
-
0.057
0.077
THERMAL SPECIFICATIONS
Thermal Resistance Junction to
Ambient
R
θ
JA
Pad Area = 0.50 in
2
(322.6 mm
2
) (Note 2)
-
-
62.5
o
C/W
Pad Area = 0.017 in
2
(11.2 mm
2
) Figure 20
-
-
199
o
C/W
Pad Area = 0.0022 in
2
(1.44 mm
2
) Figure 20
-
-
230
o
C/W
SWITCHING SPECIFICATIONS
(V
GS
= -2.5V)
Turn-On Delay Time
t
d(ON)
V
DD
= -10V, I
D
= 2.5A
V
GS
=
-2.5V,
R
GS
= 15
Figures 14, 18, 19
-
470
-
ns
Rise Time
t
r
-
1240
-
ns
Turn-Off Delay Time
t
d(OFF)
-
700
-
ns
Fall Time
t
f
-
775
-
ns
SWITCHING SPECIFICATIONS
(V
GS
= -4.5V)
Turn-On Delay Time
t
d(ON)
V
DD
= -10V, I
D
= 5.0A
V
GS
=
-4.5V,
R
GS
= 16
Figures 15, 18, 19
-
225
-
ns
Rise Time
t
r
-
470
-
ns
Turn-Off Delay Time
t
d(OFF)
-
1200
-
ns
Fall Time
t
f
-
800
-
ns
GATE CHARGE SPECIFICATIONS
Total Gate Charge
Q
g(TOT)
V
GS
= 0V to -4.5V
V
DD
= -10V,
I
D
= 5.0A,
I
g(REF)
= 1.0mA
Figures 13, 16, 17
-
8.6
-
nC
Gate Charge at -2V
Q
g(-2)
V
GS
= 0V to -2V
-
4.1
-
nC
Threshold Gate Charge
Q
g(TH)
V
GS
= 0V to -0.5V
-
0.5
-
nC
Gate to Source Gate Charge
Q
gs
-
1.2
-
nC
Gate to Drain “Miller” Charge
Q
gd
-
1.8
-
nC
CAPACITANCE SPECIFICATIONS
Input Capacitance
C
ISS
V
DS
= -10V, V
GS
= 0V,
f = 1MHz
Figure 12
-
750
-
pF
Output Capacitance
C
OSS
-
215
-
pF
Reverse Transfer Capacitance
C
RSS
-
100
-
pF
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Source to Drain Diode Voltage
V
SD
I
SD
= -5.0A
-
-0.86
-
V
Reverse Recovery Time
t
rr
I
SD
= -5.0A, dI
SD
/dt = 10A/
μ
s
-
40
-
ns
Reverse Recovered Charge
Q
RR
I
SD
= -5.0A, dI
SD
/dt = 10A/
μ
s
-
5
-
nC
ITF87056DQT
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