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參數(shù)資料
| 型號： | ISPLSI2032VE-225LT44 |
| 廠商： | LATTICE SEMICONDUCTOR CORP |
| 元件分類： | PLD |
| 英文描述： | 3.3V In-System Programmable High Density SuperFAST⑩ PLD |
| 中文描述： | EE PLD, 6 ns, PQFP44 |
| 封裝： | 10 X 10 MM, 0.80 MM PITCH, TQFP-44 |
| 文件頁數(shù)： | 4/12頁 |
| 文件大小： | 156K |
| 代理商： | ISPLSI2032VE-225LT44 |
Specifications
ispLSI 2032VL
4
Switching Test Conditions
Input Pulse Levels
Table 2-0003/2032VL
Input Rise and Fall Time
10% to 90%
Input Timing Reference Levels
Output Timing Reference Levels
Output Load
GND to V
CC
≤
1.5 ns
V
CC
/2
V
CC
/2
See Figure 2
3-state levels are measured 0.15V from
steady-state active level.
Output Load Conditions (see Figure 2)
Figure 2. Test Load
V
CC
R1
R2
CL
*
Device
Output
Test
Point
*
CL includes Test Fixture and Probe Capacitance.
0213A/2032VL
TEST CONDITION
R1
250
∞
250
R2
218
218
∞
CL
35pF
35pF
35pF
A
B
Active High
Active Low
Active High to Z
at
V
OH
C
250
∞
5pF
∞
218
5pF
Active Low to Z
at
V
+0.15V
OL
Table 2-0004A/2032VL
V
OL
SYMBOL
1. One output at a time for a maximum duration of one second. V
OUT
= 0.5V was selected to avoid test
problems by tester ground degradation. Characterized but not 100% tested.
2. Measured using two 16-bit counters.
3. Typical values are at V
CC
= 2.5V and T
A
= 25
°
C.
4. Maximum I
CC
varies widely with specific device configuration and operating frequency. Refer to Power Consumption
section of this data sheet and Thermal Management section of the Lattice Semiconductor Data Book or CD-ROM to
estimate maximum I
CC
.
5. With no pull-up resistors.
Table 2-0007/2032VL
1
5
V
OH
I
IH
I
IL-isp
I
IL-PU
I
OS
I
CC
I
IL
PARAMETER
2, 4
Output Low Voltage
Output High Voltage
Input or I/O High Leakage Current
BSCAN
Input Pull-Up Current
I/O Active Pull-Up Current
Output Short Circuit Current
Input or I/O Low Leakage Current
Operating Power Supply Current
I
OL
= 100
μ
A
I
OL
= 8mA
I
OH
= -100
μ
A
0V
≤
V
≤
V (Max.)
IN
V
IH
(min)
≤
V
IN
≤
3.6V
0V
≤
V
≤
V
0V
≤
V
≤
V
V = 2.5V, V = 0.5V
V = 0.0V, V = 2.5V
f = 1 MHz
IN
IL
IN
IL
CONDITION
MIN.
—
TYP.
—
MAX.
0.2
UNITS
V
3
2.0
1.8
—
—
—
—
—
—
—
—
—
—
—
—
—
45
—
—
10
-150
-150
-100
-10
V
V
μ
A
μ
A
μ
A
mA
μ
A
mA
—
I
OH
= -1mA
I
OH
= -4mA
V
CC
- 0.2
—
—
V
—
—
0.4
V
DC Electrical Characteristics
Over Recommended Operating Conditions
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ISPLSI2032VE225LT44I | 制造商:LATTICE 制造商全稱:Lattice Semiconductor 功能描述:3.3V In-System Programmable High Density SuperFAST⑩ PLD |
| ISPLSI2032VE225LT48 | 制造商:LATTICE 制造商全稱:Lattice Semiconductor 功能描述:3.3V In-System Programmable High Density SuperFAST⑩ PLD |
| ispLSI2032VE-225LT48 | 功能描述:CPLD - 復(fù)雜可編程邏輯器件 USE ispMACH 4000V RoHS:否 制造商:Lattice 系列: 存儲類型:EEPROM 大電池?cái)?shù)量:128 最大工作頻率:333 MHz 延遲時間:2.7 ns 可編程輸入/輸出端數(shù)量:64 工作電源電壓:3.3 V 最大工作溫度:+ 90 C 最小工作溫度:0 C 封裝 / 箱體:TQFP-100 |
| ISPLSI2032VE225LT48I | 制造商:LATTICE 制造商全稱:Lattice Semiconductor 功能描述:3.3V In-System Programmable High Density SuperFAST⑩ PLD |
| ISPLSI2032VE225LTN44 | 制造商:LATTICE 制造商全稱:Lattice Semiconductor 功能描述:3.3V In-System Programmable High Density SuperFAST⑩ PLD |
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