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參數(shù)資料
| 型號(hào)： | ISO422P-U |
| 元件分類： | 收發(fā)器 |
| 英文描述： | Transceiver |
| 中文描述： | 收發(fā)器 |
| 文件頁(yè)數(shù)： | 3/9頁(yè) |
| 文件大?。?/td> | 246K |
| 代理商： | ISO422P-U |
ISO422
SBOS113A
3
POWER
Supply Voltage
—
Data Side
Supply Current
—
Data Side
Supply Current
—
Data Side
Supply Voltage
—
Bus Side
Supply Voltage
—
Bus Side
V
SA
I
SA
I
SA
V
SB
I
SB
4.5
5.5
13
V
Output Unloaded, dc
Output Unloaded, max Rate
10
20
mA
mA
V
mA
mA
4.5
5.5
20
Output Unloaded, dc
Output Unloaded, max Rate
12
20
BUS LIMITS
Input Current
Maximum Differential Input
Maximum Data Rate
±
10
±
5
mA
V
Mbps
2.5
TEMPERATURE RANGE
Operating
Storage
Thermal Resistance
–
40
–
40
+85
+125
°
C
°
C
θ
JA
75
°
C/W
NOTES: (1) All devices receive a 1s test. Failure criterion is > 5 pulses of > 5pC per cycle. (2) Logic inputs are HCT-type and thresholds are a function of power
supply voltage with approximately 100mV hysteresis. (3) Change in magnitude when the input is changed from HIGH to LOW. (4) The difference between the
differential low to high and high to low transition points.
SPECIFICATIONS
(CONT)
At T
A
= +25
°
C, and V
S
= +5V, unless otherwise noted.
ISO422P, P-U
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNITS
PIN CONFIGURATION
Top View
DIP
ABSOLUTE MAXIMUM RATINGS
Supply Voltage: V
SA
.............................................................
–
0.5V to +6V
V
.............................................................
–
0.5V to +6V
Continuous Isolation Voltage .....................................................1500Vrms
Storage Temperature ......................................................
–
40
°
C to +125
°
C
Lead Temperature (soldering, 10s) ............................................... +300
°
C
24
23
22
21
16
15
14
13
1
2
3
4
9
10
11
12
DE
D
NC
V
SA
GND
B
GND
B
Y
Z
RE
R
LBE
GND
A
V
SB
V
SB
A
B
ISO422
ELECTROSTATIC
DISCHARGE SENSITIVITY
Electrostatic discharge can cause damage ranging from per-
formance degradation to complete device failure. Burr-
Brown Corporation recommends that all integrated circuits
be handled and stored using appropriate ESD protection
methods.
ESD damage can range from subtle performance degrada-
tion to complete device failure. Precision integrated circuits
may be more susceptible to damage because very small
parametric changes could cause the device not to meet
published specifications.
PACKAGE
DRAWING
NUMBER
(1)
SPECIFIED
TEMPERATURE
RANGE
PACKAGE
MARKING
ORDERING
NUMBER
TRANSPORT
MEDIA
PRODUCT
PACKAGE
ISO422P
ISO422P-U
24-Pin Plastic DIP
24-Pin Gull Wing Surface Mount
249-4
243-5
–
40
°
C to +85
°
C
–
40
°
C to +85
°
C
ISO422P
ISO422P-U
ISO422P
ISO422P-U
Rails
Rails
NOTES: (1) For detailed drawing and dimension table, please see end of data sheet, or Appendix C of Burr-Brown IC Data Book.
PACKAGE/ORDERING INFORMATION
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