參數(shù)資料
型號(hào)： ISL9N310AP3
廠(chǎng)商： FAIRCHILD SEMICONDUCTOR CORP
元件分類(lèi)： JFETs
英文描述： N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs
中文描述： 62 A, 30 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
文件頁(yè)數(shù)： 1/11頁(yè)
文件大?。?/td> 149K
代理商： ISL9N310AP3
2002 Fairchild Semiconductor Corporation
January 2002
Rev. B, January 2002
I
ISL9N310AP3/ISL9N310AS3ST/ISL9N310AS3
N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs
General Description
This device employs a new advanced trench MOSFET
technology and features low gate charge while maintaining
low on-resistance.
Optimized for switching applications, this device improves
the overall efficiency of DC/DC converters and allows
operation to higher switching frequencies.
Applications
DC/DC converters
Features
Fast switching
r
DS(ON)
= 0.008
(Typ), V
GS
= 10V
r
DS(ON)
= 0.0115
(Typ), V
GS
= 4.5V
Q
g
(Typ) = 17nC, V
GS
= 5V
Q
gd
(Typ) = 5.4nC
C
ISS
(Typ) = 1800pF
MOSFET Maximum Ratings
T
A
= 25°C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol
Parameter
Ratings
30
±
20
Units
V
V
V
V
DSS
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (T
Continuous (T
Continuous (T
Pulsed
Power dissipation
Derate above 25
Operating and Storage Temperature
GS
I
D
62
36
13.5
Figure 4
70
0.47
-55 to 175
A
A
A
A
W
C
= 25
= 100
= 25
o
C, V
o
C, V
o
C, V
GS
= 10V)
= 4.5V)
= 10V, R
C
GS
C
GS
θ
JA
= 43
o
C/W)
P
D
o
C
W/
o
o
C
T
J
, T
STG
C
R
R
R
θ
JC
Thermal Resistance Junction to Case TO-220, TO-262, TO-263
Thermal Resistance Junction to Ambient TO-220, TO-262, TO-263
Thermal Resistance Junction to Ambient TO-263, 1in
2.14
62
43
o
C/W
o
C/W
o
C/W
θ
JA
θ
JA
2
copper pad area
Device Marking
N310AS
N310AS
N310AP
Device
Package
TO-263AB
TO-262AA
TO-220AB
Reel Size
330mm
Tube
Tube
Tape Width
24mm
N/A
N/A
Quantity
800 units
50
50
ISL9N310AS3ST
ISL9N310AS3
ISL9N310AP3
D
G
S
TO-263AB
TO-220AB
GATE
SOURCE
DRAIN
(FLANGE)
DRAIN
(FLANGE)
DRAIN
GATE
SOURCE
GATE
SDRAIN
DRAIN
(FLANGE)
TO-262AA
相關(guān)PDF資料
PDF描述
ISL9N310AS3 N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs
ISL9N312AS3ST N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs
ISL9N312AD3 POWER SUP SWITCHER 41W 24V MED
ISL9N312AD3ST PS MEDICAL SWITCHING 12V 4.7A
ISL9N312AP3 N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
ISL9N310AP3 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N TO-220AB
ISL9N310AS3 功能描述:MOSFET N-Ch LL UltraFET PWM Optimized RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
ISL9N310AS3ST 功能描述:MOSFET N-Ch LL UltraFET PWM Optimized RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
ISL9N310AW1 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
ISL9N312AD3 功能描述:MOSFET N-Ch LL UltraFET PWM Optimized RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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