
8
FN6017.3
March 15, 2005
Die Characteristics
SUBSTRATE POTENTIAL (POWERED UP)
GND
TRANSISTOR COUNT
338
PROCESS
Si Gate CMOS
Typical Performance Curves VCC = 3.3V, TA = 25°C
FIGURE 9. TRANSMITTER OUTPUT VOLTAGE vs LOAD
CAPACITANCE
FIGURE 10. SLEW RATE vs LOAD CAPACITANCE
FIGURE 11. SUPPLY CURRENT vs LOAD CAPACITANCE
WHEN TRANSMITTING DATA
FIGURE 12. SUPPLY CURRENT vs SUPPLY VOLTAGE
-6.0
-4.0
-2.0
0
2.0
4.0
6.0
1000
2000
3000
4000
5000
0
LOAD CAPACITANCE (pF)
TRANSMIT
T
E
R
OUTPUT
V
O
L
T
A
G
E
(V)
1 TRANSMITTER AT 250Kbps
VOUT+
VOUT -
1 TRANSMITTER AT 30Kbps
LOAD CAPACITANCE (pF)
SLEW
RA
TE
(V/
s)
0
1000
2000
3000
4000
5000
5
10
15
20
25
+SLEW
-SLEW
0
5
10
15
20
25
30
45
35
40
0
1000
2000
3000
4000
5000
LOAD CAPACITANCE (pF)
SUP
P
L
Y
C
URRENT
(m
A)
20Kbps
250Kbps
120Kbps
SUPPL
Y
CURRENT
(
m
A)
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
0
0.5
1.0
1.5
2.0
SUPPLY VOLTAGE (V)
2.5
3.0
3.5
NO LOAD
ALL OUTPUTS STATIC
ISL83384E