參數(shù)資料
型號(hào): ISL74422RH
英文描述: Radiation Hardened 9A. Non-Inverting Power MOSFET Drivers
中文描述: 輻射加固9A條。非反向功率MOSFET驅(qū)動(dòng)器
文件頁數(shù): 2/2頁
文件大小: 47K
代理商: ISL74422RH
2
All Intersil semiconductor products are manufactured, assembled and tested under
ISO9000
quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reli-
able. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from
its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site
www.intersil.com
Die Characteristics
DIE DIMENSIONS:
3838
μ
m x 4829
μ
m (151.1 mils x 190.1mils)
Thickness: 483
μ
m
±
25.4
μ
m (19 mils
±
1 mil)
INTERFACE MATERIALS:
Glassivation:
Type: PSG (Phosphorous Silicon Glass)
Thickness: 8.0k
±
1.0k
Top Metallization:
Type: AlSiCu
Thickness: 16.0k
±
2k
Substrate:
Radiation Hardened Silicon Gate,
Dielectric Isolation
Backside Finish:
Silicon
ASSEMBLY RELATED INFORMATION:
Substrate Potential:
Unbiased (DI)
ADDITIONAL INFORMATION:
Worst Case Current Density:
<2.0 x 10
5
A/cm
2
Transistor Count:
30
Metallization Mask Layout
ISL74422ARH
OUT1
PVCC
LVCC
IN
OUT2
PGND
LGND
ISL7442ARH
相關(guān)PDF資料
PDF描述
ISL74422ARHVF Radiation Hardened 9A, Non-Inverting Power MOSFET Drivers
ISL74422BRHVF Radiation Hardened, 9A, Non-Inverting Power MOSFET Driver
ISL74422ARHQF Radiation Hardened 9A, Non-Inverting Power MOSFET Drivers
ISL74422BRHQF Radiation Hardened, 9A, Non-Inverting Power MOSFET Driver
ISL74422BRHF Radiation Hardened, 9A, Non-Inverting Power MOSFET Driver
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