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參數(shù)資料
| 型號(hào)： | ISL72991RHVF |
| 廠商： | INTERSIL CORP |
| 元件分類： | 基準(zhǔn)電壓源/電流源 |
| 英文描述： | Radiation Hardened Negative Low Dropout Adjustable Voltage Regulator |
| 中文描述： | 2.25 V-26 V ADJUSTABLE NEGATIVE LDO REGULATOR, 1 V DROPOUT, CDFP28 |
| 封裝： | CERAMIC, DFP-28 |
| 文件頁(yè)數(shù)： | 3/3頁(yè) |
| 文件大小： | 210K |
| 代理商： | ISL72991RHVF |
3
All Intersil U.S. products are manufactured, assembled and tested utilizing ISO9000 quality systems.
Intersil Corporation’s quality certifications can be viewed at www.intersil.com/design/quality
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time without
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see www.intersil.com
Die Characteristics
DIE DIMENSIONS:
5870
μ
m x 5210
μ
m (231.1mils x 205.1mils)
Thickness: 483
μ
m
±
25.4
μ
m (19mils
±
1mil)
INTERFACE MATERIALS:
Glassivation:
Type: PSG (Phosphorous Silicon Glass)
Thickness: 8.0k
±
1.0k
Top Metallization:
Type: AlSiCu
Thickness: 16.0k
±
2k
Substrate:
Radiation Hardened Silicon Gate,
Dielectric Isolation
Backside Finish:
Silicon
ASSEMBLY RELATED INFORMATION:
Substrate Potential:
Unbiased (DI)
ADDITIONAL INFORMATION:
Worst Case Current Density:
<2.0 x 10
5
A/cm
2
Transistor Count:
Metallization Mask Layout
ISL72991RH
ISL72991RH
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