參數(shù)資料
型號： ISL6801AB-T
廠商： INTERSIL CORP
元件分類： MOSFETs
英文描述： High Voltage Bootstrap High Side Driver
中文描述： 0.2 A BUF OR INV BASED MOSFET DRIVER, PDSO8
封裝： PLASTIC, MS-012AA, SOIC-8
文件頁數(shù)： 3/6頁
文件大小： 96K
代理商： ISL6801AB-T
3
Absolute Maximum Ratings
Thermal Information
Supply Voltage, V
CC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16V
Driver Output Stage Voltage, V
B
(Referred to GND). . . . . . . . .130V
Source Reference Voltage, V
S
(-5V for 0.5ms, MOSFET Off). . . . . . . . . . . . . . . . . . . . (Min) -1.5V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . (Max) 120V
ESD Rating, V
ESD
Human Body Model . . . . . . . . . . . . . . . . . . . . . . . . . . . (Min) 820V
(Per MIL-STD-883 Method 3015.7)
Operating Conditions
Temperature Range. . . . . . . . . . . . . . . . . . . . . . . . . -40
o
C to 125
o
C
Supply Voltage Range (Max). . . . . . . . . . . . . . . . . . . . 4.5V to 6.5V
Thermal Resistance (Typical, Note 1)
SOIC Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Maximum Junction Temperature (Plastic Package) . . . . . . . .150
o
C
Maximum Storage Temperature Range . . . . . . . . . -55
o
C to 150
o
C
Maximum Lead Temperature (Soldering 10s). . . . . . . . . . . . .245
o
C
(SOIC Lead Tips Only)
θ
JA
(
o
C/W)
90
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1.
θ
JA
is measured with the component mounted on a high effective thermal conductivity test board in free air. See Tech Brief TB379 for details.
Electrical Specifications
All values are over full temperature range.
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Operating Temperature Range
T
A
-40
-
125
o
C
Source Reference Voltage
VS
-1.8V Continuous, VB/V
OH
must stay
low, IN = 0V, RES = 5V, V
CC
= 4.5V and
6.5V, VB = 5V and 12V,
(Load R = 50
, C = 6.8nF)
T
A
= -40 to 125
o
C
-1.5
-
120
V
Supply Voltage (Note 2)
V
CC
4.5
-
6.5
V
Driver Output Supply
V
VB - VS
Ident. to V
GS
of MOSFET Device
Functional
4.0
8.5
16.0
V
V
VB - GND
2.0
-
-
V
Switching Frequency
f
Guaranteed by Design
100
-
-
kHz
Voltage Transconductance (Note 3)
dVs/dt
-
-
500
V/
μ
s
Peak Gate Drive Current
I
HOpeak
Sink/Source Current VB = 5V and 16V,
100ns
-
200
-
mA
Continuous Gate Drive Current (Note 3)
I
HOcont
Sink/Source Current Continuous
6.5
8
-
mA
Gate Drive Level LOW
V
HOL, VS
IN at H, I
HO
= 1mA, VB-VS = 5V and 16V
-
-
0.3
V
Gate Drive Level LOW
V
HOL, VS
IN at H, I
HO
= 100mA
-
-
2.2
V
Gate Drive Level HIGH
V
VB, HOH
IN at L, I
HO
= 1mA, VB-VS = 5V and 16V
-
-
0.5
V
Gate Drive Level HIGH
V
VB, HOH
IN at L, I
HO
= 100mA
-
-
2.2
V
Total IN to Output Delay (Figure 1)
td
IN-HOH, L
at V
CC
= 5.0V, RES = 5V,
Output Trigger Level: 3.5V ON at
VB = 5V, 1.0V OFF at VB = 16V,
Input 2.5V (Load R = 50
, C = 6.8nF)
-
1.0
3.0
μ
s
Total RES to Output Delay (Figure 2)
td
RES - HOH, L
VB-VS = 5V and 16V,
(Load R = 50
, C = 6.8nF)
-
1.0
3.0
μ
s
Output Rise/Fall Times
t
HOH, L
Fall/Rise
VB-VS = 5V
(Load R = 50
, C = 6.8nF)
-
100
500
ns
VB-VS = 16V
-
200
500
ns
VB Drop Voltage (Figure 4, Note 4)
VB
DROP
VB-VS = 9.0V, C
100
= 1
μ
F,
(Load R = 50
, C = 6.8nF)
-
100
210
(Note 5)
mV
ISL6801
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