參數(shù)資料
型號： ISL6700IR
廠商： INTERSIL CORP
元件分類： 功率晶體管
英文描述： 80V/1.25A Peak, Medium Frequency, Low Cost, Half-Bridge Driver
中文描述： 1.4 A HALF BRDG BASED MOSFET DRIVER, PQCC12
封裝： 4 X 4 MM, PLASTIC, MLFP-12
文件頁數(shù)： 4/8頁
文件大?。?/td> 255K
代理商： ISL6700IR
4
FN9077.6
December 29, 2004
Absolute Maximum Ratings
Thermal Information
Supply Voltage, V
DD
(Note 1) . . . . . . . . . . . . . . . . . . . -0.3V to 16V
LI and HI Voltages (Note 1) . . . . . . . . . . . . . . . . -0.3V to V
DD
+0.3V
Voltage on HS (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . 0V to 80V
Voltage on HB (Note 1) . . . . . . . . . . . . . . . . V
HS
-0.3V to V
HS
+V
DD
Voltage on LO (Note 1) . . . . . . . . . . . . . . . . . V
SS
-0.3 to V
DD
+0.3V
Voltage on HO (Note 1) . . . . . . . . . . . . . . . . V
HS
-0.3V to V
HB
+0.3V
Phase Slew Rate . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V/ns
Maximum Recommended Operating Conditions
Supply Voltage, V
DD
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9V to 15V
Voltage on HS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0V to 75V
Voltage on HS (Note 2) . . . . . . . . . .(Repetitive Transient) -1V to 80V
Voltage on HB . . . . . . . . . . . . . . . . . . . . . . . . . .V
HS
+7.5V to V
HS
+V
DD
Thermal Resistance (Typical)
SOIC (Note 3) . . . . . . . . . . . . . . . . . . .
QFN (Note 4) . . . . . . . . . . . . . . . . . . . .
Max Power Dissipation at 25°C in Free Air (SOIC, Note 3). 1.316W
Max Power Dissipation at 25°C in Free Air (QFN, Note 4) . .2.976W
Maximum Storage Temperature Range. . . . . . . . . .-65°C to +150°C
Maximum Junction Temperature Range . . . . . . . . .-40°C to +150°C
Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . +300°C
(SOIC - Lead Tips Only)
For Recommended soldering conditions see Tech Brief TB389.
θ
JA
(°C/W)
95
49
θ
JC
(°C/W)
N/A
7
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the recommended operating conditions of this specification is not implied.
NOTES:
1. All voltages referenced to V
SS
unless otherwise specified.
2. Based on V
DD
=15V. The magnitude of the allowable negative transient on the HS pin is a function of the V
DD
supply voltage. V
HS
<15.6V-
V
DD
+V
F
, where V
HS
is the magnitude of the allowable negative transient and V
F
is the forward voltage drop of the bootstrap diode.
3.
θ
JA
is measured with the component mounted on a high effective thermal conductivity test board in free air. See Tech Brief TB379 for details.
4.
θ
JA
is measured in free air with the component mounted on a high effective thermal conductivity test board with “direct attach” features.
θ
JC
,
the
“case temp” is measured at the center of the exposed metal pad on the package underside. See Tech Brief TB379.
Electrical Specifications
V
DD
= V
HB
= 12V, V
SS
= V
HS
= 0V, No Load on LO or HO, Unless Otherwise Specified
PARAMETERS
SYMBOL
TEST CONDITIONS
T
J
= 25°C
T
J
= -40°C TO
125°C
UNITS
MIN
TYP
MAX
MIN
MAX
SUPPLY CURRENTS & UNDERVOLTAGE PROTECTION
V
DD
Quiescent Current
I
DD
LI = 0 or V
DD
-
1.9
2.2
-
2.4
mA
V
DD
Operating Current
I
DDO
f = 50kHz
-
2.0
2.2
-
2.5
mA
V
DD
Operating Current
I
DDO
f = 500kHz
-
2.5
3.0
-
4.0
mA
HB Off Quiescent Current
I
HBL
HI = 0
-
1.25
1.5
-
1.8
mA
HB On Quiescent Current
I
HBH
HI = V
DD
-
170
240
-
250
μ
A
HB Operating Current
I
HBO
f = 50kHz, C
L
= 1000pF
-
1.45
1.8
-
2.0
mA
HB Operating Current
I
HBO
f = 500kHz, C
L
= 1000pF
-
2.4
2.8
-
3.0
mA
HS Leakage Current
I
HLK
V
HS
= 80V
V
HB
= 96V
-
-
1
-
1
μ
A
V
DD
Rising Undervoltage Threshold
V
DDUV+
6.8
7.6
8.25
6.5
8.5
V
V
DD
Falling Undervoltage Threshold
V
DDUV-
6.5
7.1
7.8
6.25
8.1
V
Undervoltage Hysteresis
UVHYS
0.17
0.45
0.75
0.15
0.90
V
HB Undervoltage Threshold
VHBUV
Referenced to HS
4.8
5.3
6.5
4.0
7.5
V
INPUT PINS: LI and HI
Low Level Input Voltage
V
IL
Full Operating Conditions
0.8
1.6
-
0.8
-
V
High Level Input Voltage
V
IH
Full Operating Conditions
-
1.7
2.2
-
2.2
V
Input Voltage Hysteresis
-
100
-
-
-
mV
Low Level Input Current
I
IL
V
IN
= 0V, Full Operating Conditions
-70
-60
-30
-80
-30
μ
A
High Level Input Current
I
IH
V
IN
= 5V, Full Operating Conditions
30
115
130
30
145
μ
A
ISL6700
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參數(shù)描述
ISL6700IR-T 功能描述:IC DRIVER HALF BRIDGE TTL 12-QFN RoHS:否 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動器 - 外部開關(guān) 系列:- 標(biāo)準(zhǔn)包裝:50 系列:- 配置:低端 輸入類型:非反相 延遲時間:40ns 電流 - 峰:9A 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導(dǎo)啟動）:- 電源電壓:4.5 V ~ 35 V 工作溫度:-40°C ~ 125°C 安裝類型:表面貼裝 封裝/外殼:TO-263-6，D²Pak（5 引線+接片），TO-263BA 供應(yīng)商設(shè)備封裝:TO-263 包裝:管件
ISL6700IRZ 功能描述:IC DRIVER HALF BRIDGE TTL 12-QFN RoHS:是 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動器 - 外部開關(guān) 系列:- 標(biāo)準(zhǔn)包裝:6,000 系列:*
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