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參數(shù)資料
| 型號： | ISL6614B |
| 廠商： | Intersil Corporation |
| 英文描述： | 256 x 1 x 2 dual independent synchronous FIFO memories 24-SOIC -40 to 85 |
| 中文描述： | 雙高級同步整流降壓MOSFET驅(qū)動器與前葡萄牙過壓保護 |
| 文件頁數(shù)： | 1/11頁 |
| 文件大?。?/td> | 327K |
| 代理商： | ISL6614B |
1
FN9206.1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 1-888-468-3774
Intersil (and design) is a registered trademark of Intersil Americas Inc.
Copyright Intersil Americas Inc. 2005. All Rights Reserved
All other trademarks mentioned are the property of their respective owners.
ISL6614B
Dual Advanced Synchronous Rectified
Buck MOSFET Drivers with Pre-POR OVP
The ISL6614B integrates two ISL6613B MOSFET drivers
and is specifically designed to drive two Channel MOSFETs
in a synchronous rectified buck converter topology. This
driver combined with HIP63xx or ISL65xx Multi-Phase Buck
PWM controllers and N-Channel MOSFETs forms complete
core-voltage regulator solutions for advanced
microprocessors.
The ISL6614B features 7V rising threshold and drives both
the upper and lower gates simultaneously
over a range from
5V to 12V. This drive-voltage provides the flexibility
necessary to optimize applications involving trade-offs
between gate charge and conduction losses. This driver is
optimized for POL DC/DC Converters for IBA Systems.
An advanced adaptive zero shoot-through protection is
integrated to prevent both the upper and lower MOSFETs
from conducting simultaneously and to minimize the dead
time. These products add an overvoltage protection feature
operational before VCC exceeds its turn-on threshold, at
which the PHASE node is connected to the gate of the low
side MOSFET (LGATE). The output voltage of the converter
is then limited by the threshold of the low side MOSFET,
which provides some protection to the microprocessor if the
upper MOSFET(s) is shorted during start-up.
The ISL6614B also features a three-state PWM input which,
working together with Intersil’s multi-phase PWM controllers,
prevents a negative transient on the output voltage when the
output is shut down. This feature eliminates the Schottky
diode that is used in some systems for protecting the load
from reversed output voltage events.
Features
Pin-to-pin Compatible with HIP6602 SOIC family
Quad N-Channel MOSFET Drives for Two Synchronous
Rectified Bridges
Low VCC Rising Threshold (7V) for IBA Applications
Advanced Adaptive Zero Shoot-Through Protection
- Body Diode Detection
- Auto-zero of r
DS(ON)
Conduction Offset Effect
Adjustable Gate Voltage (5V to 12V) for Optimal Efficiency
Internal Bootstrap Schottky Diode
Bootstrap Capacitor Overcharging Prevention
Supports High Switching Frequency (up to 1MHz)
- 3A Sinking Current Capability
- Fast Rise/Fall Times and Low Propagation Delays
Three-State PWM Input for Output Stage Shutdown
Three-State PWM Input Hysteresis for Applications With
Power Sequencing Requirement
Pre-POR Overvoltage Protection
VCC Undervoltage Protection
Expandable Bottom Copper Pad for Enhanced Heat
Sinking
QFN Package:
- Compliant to JEDEC PUB95 MO-220 QFN - Quad Flat
No Leads - Package Outline
- Near Chip Scale Package footprint, which improves
PCB efficiency and has a thinner profile
Pb-Free Plus Anneal Available (RoHS Compliant)
Applications
Optimized for POL DC/DC Converters for IBA Systems
Core Regulators for Intel
and AMD
Microprocessors
High Current DC/DC Converters
High Frequency and High Efficiency VRM and VRD
Related Literature
Technical Brief TB363 “Guidelines for Handling and
Processing Moisture Sensitive Surface Mount Devices
(SMDs)”
Technical Brief 400 and 417 for Power Train Design,
Layout Guidelines, and Feedback Compensation Design
Data Sheet
July 25, 2005
相關PDF資料 |
PDF描述 |
|---|---|
| ISL6614BIB | Dual Advanced Synchronous Rectified Buck MOSFET Drivers with Pre-POR OVP |
| ISL6614BIB-T | Dual Advanced Synchronous Rectified Buck MOSFET Drivers with Pre-POR OVP |
| ISL6614BIBZ | Dual Advanced Synchronous Rectified Buck MOSFET Drivers with Pre-POR OVP |
| ISL6614BIBZ-T | Dual Advanced Synchronous Rectified Buck MOSFET Drivers with Pre-POR OVP |
| ISL6614BCB-T | Dual Advanced Synchronous Rectified Buck MOSFET Drivers with Pre-POR OVP |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| ISL6614BCB | 制造商:Rochester Electronics LLC 功能描述: 制造商:Intersil Corporation 功能描述: |
| ISL6614BCBZ | 功能描述:IC DRVR DUAL SYNC BUCK 14-SOIC RoHS:是 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動器 - 外部開關 系列:- 標準包裝:50 系列:- 配置:高端 輸入類型:非反相 延遲時間:200ns 電流 - 峰:250mA 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導啟動）:600V 電源電壓:12 V ~ 20 V 工作溫度:-40°C ~ 125°C 安裝類型:通孔 封裝/外殼:8-DIP（0.300"，7.62mm） 供應商設備封裝:8-DIP 包裝:管件 其它名稱:*IR2127 |
| ISL6614BCBZ-T | 功能描述:IC DRVR DUAL SYNC BUCK 14-SOIC RoHS:是 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動器 - 外部開關 系列:- 標準包裝:50 系列:- 配置:高端 輸入類型:非反相 延遲時間:200ns 電流 - 峰:250mA 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導啟動）:600V 電源電壓:12 V ~ 20 V 工作溫度:-40°C ~ 125°C 安裝類型:通孔 封裝/外殼:8-DIP（0.300"，7.62mm） 供應商設備封裝:8-DIP 包裝:管件 其它名稱:*IR2127 |
| ISL6614BCRZ | 功能描述:IC DRVR DUAL SYNC BUCK 16-QFN RoHS:是 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動器 - 外部開關 系列:- 標準包裝:50 系列:- 配置:高端 輸入類型:非反相 延遲時間:200ns 電流 - 峰:250mA 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導啟動）:600V 電源電壓:12 V ~ 20 V 工作溫度:-40°C ~ 125°C 安裝類型:通孔 封裝/外殼:8-DIP（0.300"，7.62mm） 供應商設備封裝:8-DIP 包裝:管件 其它名稱:*IR2127 |
| ISL6614BCRZ-T | 功能描述:IC DRVR DUAL SYNC BUCK 16-QFN RoHS:是 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動器 - 外部開關 系列:- 標準包裝:50 系列:- 配置:高端 輸入類型:非反相 延遲時間:200ns 電流 - 峰:250mA 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導啟動）:600V 電源電壓:12 V ~ 20 V 工作溫度:-40°C ~ 125°C 安裝類型:通孔 封裝/外殼:8-DIP（0.300"，7.62mm） 供應商設備封裝:8-DIP 包裝:管件 其它名稱:*IR2127 |
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