參數(shù)資料
型號: ISL6614AIR
廠商: INTERSIL CORP
元件分類: 功率晶體管
英文描述: 64 x 1 x 2 dual independent synchronous FIFO memories 28-SOIC -40 to 85
中文描述: 2 CHANNEL, HALF BRDG BASED MOSFET DRIVER, PQCC16
封裝: 4 X 4 MM, PLASTIC, MO-220VGGC, QFN-16
文件頁數(shù): 6/12頁
文件大?。?/td> 330K
代理商: ISL6614AIR
6
FN9160.2
July 25, 2005
UGATE Rise Time
t
RU
V
PVCC
= 12V, 3nF Load, 10% to 90%
-
26
-
ns
LGATE Rise Time
t
RL
V
PVCC
= 12V, 3nF Load, 10% to 90%
-
18
-
ns
UGATE Fall Time
t
FU
V
PVCC
= 12V, 3nF Load, 90% to 10%
-
18
-
ns
LGATE Fall Time
t
FL
V
PVCC
= 12V, 3nF Load, 90% to 10%
-
12
-
ns
UGATE Turn-On Propagation Delay (Note 4)
t
PDHU
V
PVCC
= 12V, 3nF Load, Adaptive
-
10
-
ns
LGATE Turn-On Propagation Delay (Note 4)
t
PDHL
V
PVCC
= 12V, 3nF Load, Adaptive
-
10
-
ns
UGATE Turn-Off Propagation Delay (Note 4)
t
PDLU
V
PVCC
= 12V, 3nF Load
-
10
-
ns
LGATE Turn-Off Propagation Delay (Note 4)
t
PDLL
V
PVCC
= 12V, 3nF Load
-
10
-
ns
LG/UG Three-State Propagation Delay (Note 4)
t
PDTS
V
PVCC
= 12V, 3nF Load
-
10
-
ns
OUTPUT (Note 4)
Upper Drive Source Current
I
U_SOURCE
V
PVCC
= 12V, 3nF Load
-
1.25
-
A
Upper Drive Source Impedance
R
U_SOURCE
150mA Source Current
1.25
2.0
3.0
Upper Drive Sink Current
I
U_SINK
V
PVCC
= 12V, 3nF Load
-
2
-
A
Upper Drive Transition Sink Impedance
R
U_SINK_TR
70ns With Respect To PWM Falling
-
1.3
2.2
Upper Drive DC Sink Impedance
R
U_SINK_DC
150mA Source Current
0.9
1.65
3.0
Lower Drive Source Current
I
L_SOURCE
V
PVCC
= 12V, 3nF Load
-
2
-
A
Lower Drive Source Impedance
R
L_SOURCE
150mA Source Current
0.85
1.25
2.2
Lower Drive Sink Current
I
L_SINK
V
PVCC
= 12V, 3nF Load
-
3
-
A
Lower Drive Sink Impedance
R
L_SINK
150mA Sink Current
0.60
0.80
1.35
NOTE:
4. Guaranteed by design. Not 100% tested in production.
Electrical Specifications
Recommended Operating Conditions, Unless Otherwise Noted.
(Continued)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
ISL6614A
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