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參數(shù)資料
| 型號(hào)： | ISL6605CRZA |
| 廠商： | INTERSIL CORP |
| 元件分類： | MOSFETs |
| 英文描述： | Synchronous Rectified MOSFET Driver |
| 中文描述： | 4 A HALF BRDG BASED MOSFET DRIVER, PQCC8 |
| 封裝： | 3 X 3 MM, ROHS COMPLIANT, PLASTIC, MO-220VEEC, QFN-8 |
| 文件頁(yè)數(shù)： | 7/9頁(yè) |
| 文件大?。?/td> | 302K |
| 代理商： | ISL6605CRZA |
7
FN9091.5
January 4, 2005
Application Information
Fault Mode at Repetitive Startups
At a low VCC (<2V), the Thevenin equivalent of the 20k
divider at the PWM pin, as shown in the Block Diagram on
page 2, is no longer true; very high impedance will be seen
from the PWM pin to GND. Junction leakage currents from
the VCC to the resistor tub will tend to pull up the PWM input
and falsely trigger the UGATE. If the energy stored in the
bootstrap capacitor is not completely discharged during the
previous power-down period, then the upper MOSFET could
be turned on and generate a spike at the output when VCC
ramps up. A 499k
resistor at the PWM to GND, as shown in
Figure 3, helps bleed the leakage currents, thus eliminating
the startup spike.
Layout Considerations and MOSFET Selection
The parasitic inductances of the PCB and the power devices
(both upper and lower FETs) generate a negative ringing at
the trailing edge of the PHASE node. This negative ringing
plus the VCC adds charges to the bootstrap capacitor
through the internal bootstrap schottky diode when the
PHASE node is low. If the negative spikes are too large,
especially at high current applications with a poor layout, the
voltage on the bootstrap capacitor could exceed the VCC
and the device’s maximum rating. The V
BOOT-PHASE
voltage should be checked at the worst case (maximum VCC
and prior to overcurrent trip point), especially for applications
with higher than 20A per D
2
PAK FET. MOSFETs with low
parasitic lead inductances, such as multi-SOURCE leads
devices (SO-8 and LFPAK), are recommended.
Careful layout would help reduce the negative ringing peak
significantly:
- Tie the SOURCE of the upper FET and the DRAIN of
the lower FET as close as possible;
- Use the shortest low-impedance trace between the
SOURCE of the lower FET and the power ground;
- Tie the GND of the ISL6605 closely to the SOURCE of
the lower FET.
A resistor placement of R
BOOT
, as shown in Figure 5, in the
earlier design is recommended; it helps eliminate the
overcharge of the BOOT capacitor, in terms of voltage stress
across the BOOT to PHASE. When needed, 1 to 2 Ohm
R
BOOT
is sufficient and has little impact on the overall
efficiency. However, a design with good layout and using
MOSFETs with low parasitic lead inductances, such as
multi-SOURCE leads devices (SO-8 and LFPAK), is
generally not required such a resistor.
When placing the QFN part on the board, no vias or trace
should be running in between pin numbers 1 and 8 since a
small piece of copper is underneath the corner for the
orientation. In addition, connecting the thermal pad of the
QFN part to the power ground with a via, or placing a low
noise copper plane underneath the SOIC part is strongly
recommended for high switching frequency, high current
applications. This is for heat spreading and allows the part
to achieve its full thermal potential.
0
100
200
300
400
500
600
700
800
900
1000
0
200
400 600 800 1000 1200 1400 1600 1800 2000
FREQUENCY (KHZ)
Q
U
=50nC
Q
L
=50nC
Q
U
=50nC
Q
L
=100nC
Q
U
=100nC
Q
L
=200nC
Q
U
=20nC
Q
L
=50nC
P
)
FIGURE 2. POWER DISSIPATION VS. FREQUENCY
PWM
ISL6605
499K
GND
FIGURE 3. 499k
RESISTOR
PHASE
Negative Spike
FIGURE 4. TYPICAL PHASE NODE VOLTAGE WAVEFORM
ISL6605
BOOT
PHASE
C
BOOT
R
BOOT
FIGURE 5. RESISTOR PLACEMENT FOR THE R
BOOT
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| ISL6605CRZ-TK | 功能描述:IC MOSFET DVR SYNC BUCK 8QFN RoHS:是 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動(dòng)器 - 外部開關(guān) 系列:- 標(biāo)準(zhǔn)包裝:6,000 系列:* |
| ISL6605IB | 功能描述:功率驅(qū)動(dòng)器IC MOSFET DUAL SYNC RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時(shí)間: 下降時(shí)間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
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