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參數(shù)資料
| 型號： | ISL6594B |
| 廠商： | Intersil Corporation |
| 英文描述： | Advanced Synchronous Rectified Buck MOSFET Drivers with Protection Features(帶保護功能的高級同步整流降壓MOSFET驅(qū)動器) |
| 中文描述： | 先進的同步整流降壓MOSFET驅(qū)動器（帶保護功能的高級同步整流降壓MOSFET的驅(qū)動器與保護功能） |
| 文件頁數(shù)： | 4/10頁 |
| 文件大?。?/td> | 232K |
| 代理商： | ISL6594B |
4
FN9157.4
July 26, 2007
Absolute Maximum Ratings
Thermal Information
Supply Voltage (VCC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15V
Supply Voltage (PVCC) . . . . . . . . . . . . . . . . . . . . . . . . . VCC + 0.3V
BOOT Voltage (V
BOOT
). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .36V
Input Voltage (V
PWM
) . . . . . . . . . . . . . . . . . . . . . .GND - 0.3V to 7V
UGATE. . . . . . . . . . . . . . . . . . . V
PHASE
- 0.3V
DC
to V
BOOT
+ 0.3V
V
PHASE
- 3.5V (<100ns Pulse Width, 2μJ) to V
BOOT
+ 0.3V
LGATE . . . . . . . . . . . . . . . . . . . . . . GND - 0.3V
DC
to V
PVCC
+ 0.3V
GND - 5V (<100ns Pulse Width, 2μJ) to V
PVCC
+ 0.3V
PHASE. . . . . . . . . . . . . . . GND - 0.3V
DC
to 15V
DC
(V
PVCC
= 12V)
GND - 8V (<400ns, 20μJ) to 30V (<200ns, VBOOT - GND < 36V)
ESD Rating
Human Body Model . . . . . . . . . . . . . . . . . . . .Class I JEDEC STD
Recommended Operating Conditions
Ambient Temperature Range. . . . . . . . . . . . . . . . . . . . 0°C to +85°C
Maximum Operating Junction Temperature. . . . . . . . . . . . . . 125°C
Supply Voltage, VCC . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12V ±10%
Supply Voltage Range, PVCC . . . . . . . . . . . . . . . .5V to 12V
±10%
Thermal Resistance
SOIC Package (Note 1) . . . . . . . . . . . .
DFN Package (Notes 2, 3). . . . . . . . . .
Maximum Junction Temperature (Plastic Package) . . . . . . .+150°C
Maximum Storage Temperature Range. . . . . . . . . .-65°C to +150°C
Pb-free reflow profile . . . . . . . . . . . . . . . . . . . . . . . . . .see link below
θJA
(°C/W)
100
48
θ
JC
(°C/W)
N/A
7
CAUTION: Do not operate at or near the maximum ratings listed for extended periods of time. Exposure to such conditions may adversely impact product reliability and
result in failures not covered by warranty.
NOTES:
1.
θ
JA
is measured with the component mounted on a high effective thermal conductivity test board in free air.
2.
θ
JA
is measured in free air with the component mounted on a high effective thermal conductivity test board with “direct attach” features. See
Tech Brief TB379.
3. For
θ
JC
, the “case temp” location is the center of the exposed metal pad on the package underside.
Electrical Specifications
Recommended Operating Conditions, Unless Otherwise Noted.
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
VCC SUPPLY CURRENT
Bias Supply Current
I
VCC
ISL6594A, f
PWM
= 300kHz, V
VCC
= 12V
-
8
-
mA
ISL6594B, f
PWM
= 300kHz, V
VCC
= 12V
-
4.5
-
mA
I
VCC
ISL6594A, f
PWM
= 1MHz, V
VCC
= 12V
-
10.5
-
mA
ISL6594B, f
PWM
= 1MHz, V
VCC
= 12V
-
5
-
mA
Gate Drive Bias Current
I
PVCC
ISL6594A, f
PWM
= 300kHz, V
PVCC
= 12V
-
4
-
mA
ISL6594B, f
PWM
= 300kHz, V
PVCC
= 12V
-
7.5
-
mA
I
PVCC
(Note 4)
ISL6594A, f
PWM
= 1MHz, V
PVCC
= 12V
-
5
-
mA
ISL6594B, f
PWM
= 1MHz, V
PVCC
= 12V
-
8.5
-
mA
POWER-ON RESET AND ENABLE
VCC Rising Threshold
9.35
9.8
10.0
V
VCC Falling Threshold
7.35
7.6
8.0
V
PWM INPUT (See Timing Diagram on page 6)
Input Current
I
PWM
V
PWM
= 3.3V
-
505
-
μA
V
PWM
= 0V
-
-460
-
μA
PWM Rising Threshold (Note 4)
VCC = 12V
-
1.70
-
V
PWM Falling Threshold (Note 4)
VCC = 12V
-
1.30
-
V
Typical Three-State Shutdown Window
VCC = 12V
1.23
-
1.82
V
Three-State Lower Gate Falling Threshold
VCC = 12V
-
1.18
-
V
Three-State Lower Gate Rising Threshold
VCC = 12V
-
0.76
-
V
Three-State Upper Gate Rising Threshold
VCC = 12V
-
2.36
-
V
ISL6594A, ISL6594B
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