參數(shù)資料
型號: ISL6594ACRZ
廠商: INTERSIL CORP
元件分類: 功率晶體管
英文描述: Dual Low-Noise Wide-Bandwidth Precision Amplifier 8-SOIC -40 to 85
中文描述: 3 A HALF BRDG BASED MOSFET DRIVER, PDSO10
封裝: 3 X 3 MM, ROHS COMPLIANT, PLASTIC, DFN-10
文件頁數(shù): 1/10頁
文件大?。?/td> 306K
代理商: ISL6594ACRZ
1
FN9157.1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143
Intersil (and design) is a registered trademark of Intersil Americas Inc.
Copyright Intersil Americas Inc. 2004, 2004. All Rights Reserved
All other trademarks mentioned are the property of their respective owners.
ISL6594A, ISL6594B
Advanced Synchronous Rectified Buck
MOSFET Drivers with Protection Features
The ISL6594A and ISL6594B are high frequency MOSFET
drivers specifically designed to drive upper and lower power
N-Channel MOSFETs in a synchronous rectified buck
converter topology. These drivers combined with the
ISL6592 Digital Multi-Phase Buck PWM controller and
N-Channel MOSFETs form a complete core-voltage
regulator solution for advanced microprocessors.
The ISL6594A drives the upper gate to 12V, while the lower
gate can be independently driven over a range from 5V to
12V. The ISL6594B drives both upper and lower gates over
a range of 5V to 12V. This drive-voltage provides the
flexibility necessary to optimize applications involving trade-
offs between gate charge and conduction losses.
An adaptive zero shoot-through protection is integrated to
prevent both the upper and lower MOSFETs from conducting
simultaneously and to minimize the dead time. These
products add an overvoltage protection feature operational
before VCC exceeds its turn-on threshold, at which the
PHASE node is connected to the gate of the low side
MOSFET (LGATE). The output voltage of the converter is
then limited by the threshold of the low side MOSFET, which
provides some protection to the microprocessor if the upper
MOSFET(s) is shorted during initial start-up.
These drivers also feature a three-state PWM input which,
working together with Intersil’s multi-phase PWM controllers,
prevents a negative transient on the output voltage when the
output is shut down. This feature eliminates the Schottky
diode that is used in some systems for protecting the load
from reversed output voltage events.
Features
Dual MOSFET Drives for Synchronous Rectified Bridge
Adjustable Gate Voltage (5V to 12V) for Optimal Efficiency
36V Internal Bootstrap Schottky Diode
Bootstrap Capacitor Overcharging Prevention
Supports High Switching Frequency (up to 2MHz)
- 3A Sinking Current Capability
- Fast Rise/Fall Times and Low Propagation Delays
Three-State PWM Input for Output Stage Shutdown
Three-State PWM Input Hysteresis for Applications With
Power Sequencing Requirement
Pre-POR Overvoltage Protection
VCC Undervoltage Protection
Expandable Bottom Copper Pad for Enhanced Heat
Sinking
Dual Flat No-Lead (DFN) Package
- Near Chip-Scale Package Footprint; Improves PCB
Efficiency and Thinner in Profile
Pb-Free Available (RoHS Compliant)
Applications
Core Regulators for Intel and AMD Microprocessors
High Current DC/DC Converters
High Frequency and High Efficiency VRM and VRD
Related Literature
Technical Brief TB363 “Guidelines for Handling and
Processing Moisture Sensitive Surface Mount Devices
(SMDs)”
Technical Briefs TB400 and TB417 for Power Train
Design, Layout Guidelines, and Feedback Compensation
Design
Data Sheet
May 6, 2005
相關(guān)PDF資料
PDF描述
ISL6594ACRZ-T Advanced Synchronous Rectified Buck MOSFET Drivers with Protection Features
ISL6594BCB Dual Low-Noise Wide-Bandwidth Precision Amplifier 8-SOIC -40 to 85
ISL6594BCBZ-T Dual Low-Noise Wide-Bandwidth Precision Amplifier 8-SOIC -40 to 85
ISL6594BCR Advanced Synchronous Rectified Buck MOSFET Drivers with Protection Features
ISL6594BCRZ Dual Low-Noise Wide-Bandwidth Precision Amplifier 8-PDIP -40 to 85
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