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參數資料
| 型號： | ISL6563IRZ |
| 廠商： | INTERSIL CORP |
| 元件分類： | 穩(wěn)壓器 |
| 英文描述： | Two-Phase Multi-Phase Buck PWM Controller with Integrated MOSFET Drivers |
| 中文描述： | SWITCHING CONTROLLER, 255 kHz SWITCHING FREQ-MAX, PQCC24 |
| 封裝： | 4 X 4 MM, ROHS COMPLIANT, PLASTIC, MO-220-VGGD-2, QFN-24 |
| 文件頁數： | 5/19頁 |
| 文件大?。?/td> | 516K |
| 代理商： | ISL6563IRZ |
5
FN9126.6
April 13, 2005
Timing Diagram
Functional Pin Description
VCC (Pin 8)
Bias supply for the IC’s small-signal circuitry. Connect this
pin to a 5V supply and locally decouple using a quality 0.1
μ
F
ceramic capacitor.
PVCC (Pin 16)
Power supply pin for the MOSFET drives. Connect this pin to
a 5V supply and locally decouple using a quality 1
μ
F
ceramic capacitor.
GND and PGND (Pins 25 and 14)
Connect these pins to the circuit ground using the shortest
possible paths. All internal small-signal circuitry is
referenced to the GND pin. LGATE drive is referenced to the
PGND pin.
VID0-4 (Pins 2, 1, 24-22)
Voltage identification inputs from microprocessor. These pins
respond to TTL logic thresholds. The ISL6563 decodes the
VID inputs to establish the output voltage; see VID Tables for
correspondence between DAC codes and output voltage
OVERCURRENT PROTECTION
Overcurrent Trip Level
-
95
-
μ
A
PROTECTION
Overvoltage Threshold while IC Disabled
VRM9.0 configuration
1.90
1.95
2.00
V
Hammer and VRM10.0 configurations
1.60
1.65
1.70
V
Overvoltage Threshold
FB Rising
-
VID
+200mV
-
V
Overvoltage Hysteresis
-
100
-
mV
SWITCHING TIME
UGATE Rise Time (Note 6)
t
RUGATE;
V
VCC
= 5V, 3nF Load
-
8
-
ns
LGATE Rise Time (Note 6)
t
RLGATE;
V
VCC
= 5V, 3nF Load
-
8
-
ns
UGATE Fall Time (Note 6)
t
FUGATE;
V
VCC
= 5V, 3nF Load
-
8
-
ns
LGATE Fall Time (Note 6)
t
FLGATE;
V
VCC
= 5V, 3nF Load
-
4
-
ns
UGATE Turn-On Non-overlap (Note 6)
t
PDHUGATE
; V
VCC
= 5V, 3nF Load
-
8
-
ns
LGATE Turn-On Non-overlap (Note 6)
t
PDHLGATE
; V
VCC
= 5V, 3nF Load
-
8
-
ns
OUTPUT
Upper Drive Source Resistance
100mA Source Current
-
0.5
1.3
Upper Drive Sink Resistance
100mA Sink Current
-
0.4
1.0
Lower Drive Source Resistance
100mA Source Current
-
0.5
1.3
Lower Drive Sink Resistance
100mA Sink Current
-
0.3
1.0
NOTES:
5. Parameter magnitude at T
J
= -40°C determined through characterization.
6. Parameter magnitude guaranteed by design.
Electrical Specifications
Test Conditions: V
CC
= 5V, T
J
= 0°C to 85°C, Unless Otherwise Specified
(Continued)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNITS
UGATE
LGATE
t
FLGATE
t
PDHUGATE
t
RUGATE
t
FUGATE
t
PDHLGATE
t
RLGATE
ISL6563
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| ISL6563IRZ-T | 功能描述:電流型 PWM 控制器 P6 TWO PHS CONT INTEGRTD DRVRS DESKT RoHS:否 制造商:Texas Instruments 開關頻率:27 KHz 上升時間: 下降時間: 工作電源電壓:6 V to 15 V 工作電源電流:1.5 mA 輸出端數量:1 最大工作溫度:+ 105 C 安裝風格:SMD/SMT 封裝 / 箱體:TSSOP-14 |
| ISL6564ACRZ | 功能描述:IC REG CTRLR BUCK PWM VM 40-QFN RoHS:是 類別:集成電路 (IC) >> PMIC - 穩(wěn)壓器 - DC DC 切換控制器 系列:- 產品培訓模塊:Lead (SnPb) Finish for COTS Obsolescence Mitigation Program 標準包裝:2,500 系列:- PWM 型:電流模式 輸出數:1 頻率 - 最大:275kHz 占空比:50% 電源電壓:18 V ~ 110 V 降壓:無 升壓:無 回掃:無 反相:無 倍增器:無 除法器:無 Cuk:無 隔離:是 工作溫度:-40°C ~ 85°C 封裝/外殼:8-SOIC（0.154"，3.90mm 寬） 包裝:帶卷 (TR) |
| ISL6564ACRZ-T | 功能描述:IC REG CTRLR BUCK PWM VM 40-QFN RoHS:是 類別:集成電路 (IC) >> PMIC - 穩(wěn)壓器 - DC DC 切換控制器 系列:- 產品培訓模塊:Lead (SnPb) Finish for COTS Obsolescence Mitigation Program 標準包裝:2,500 系列:- PWM 型:電流模式 輸出數:1 頻率 - 最大:275kHz 占空比:50% 電源電壓:18 V ~ 110 V 降壓:無 升壓:無 回掃:無 反相:無 倍增器:無 除法器:無 Cuk:無 隔離:是 工作溫度:-40°C ~ 85°C 封裝/外殼:8-SOIC（0.154"，3.90mm 寬） 包裝:帶卷 (TR) |
| ISL6564AIRZ | 功能描述:IC REG CTRLR BUCK PWM VM 40-QFN RoHS:是 類別:集成電路 (IC) >> PMIC - 穩(wěn)壓器 - DC DC 切換控制器 系列:- 產品培訓模塊:Lead (SnPb) Finish for COTS Obsolescence Mitigation Program 標準包裝:2,500 系列:- PWM 型:電流模式 輸出數:1 頻率 - 最大:275kHz 占空比:50% 電源電壓:18 V ~ 110 V 降壓:無 升壓:無 回掃:無 反相:無 倍增器:無 除法器:無 Cuk:無 隔離:是 工作溫度:-40°C ~ 85°C 封裝/外殼:8-SOIC（0.154"，3.90mm 寬） 包裝:帶卷 (TR) |
| ISL6564AIRZ-T | 功能描述:IC REG CTRLR BUCK PWM VM 40-QFN RoHS:是 類別:集成電路 (IC) >> PMIC - 穩(wěn)壓器 - DC DC 切換控制器 系列:- 產品培訓模塊:Lead (SnPb) Finish for COTS Obsolescence Mitigation Program 標準包裝:2,500 系列:- PWM 型:電流模式 輸出數:1 頻率 - 最大:275kHz 占空比:50% 電源電壓:18 V ~ 110 V 降壓:無 升壓:無 回掃:無 反相:無 倍增器:無 除法器:無 Cuk:無 隔離:是 工作溫度:-40°C ~ 85°C 封裝/外殼:8-SOIC（0.154"，3.90mm 寬） 包裝:帶卷 (TR) |
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