參數(shù)資料
型號: ISL6532ACRZ-T
廠商: INTERSIL CORP
元件分類: 穩(wěn)壓器
英文描述: PWM Control Circuit 16-SSOP 0 to 70
中文描述: 3 A SWITCHING CONTROLLER, 280 kHz SWITCHING FREQ-MAX, PQCC28
封裝: 6 X 6 MM, ROHS COMPLIANT, PLASTIC, MO-220VJJC, QFN-28
文件頁數(shù): 14/16頁
文件大?。?/td> 504K
代理商: ISL6532ACRZ-T
14
Increasing the value of inductance reduces the ripple current
and voltage. However, the large inductance values reduce
the converter’s response time to a load transient.
One of the parameters limiting the converter’s response to a
load transient is the time required to change the inductor
current. Given a sufficiently fast control loop design, the
ISL6532A will provide either 0% or 100% duty cycle in
response to a load transient. The response time is the time
required to slew the inductor current from an initial current
value to the transient current level. During this interval the
difference between the inductor current and the transient
current level must be supplied by the output capacitor.
Minimizing the response time can minimize the output
capacitance required.
The response time to a transient is different for the
application of load and the removal of load. The following
equations give the approximate response time interval for
application and removal of a transient load:
where: I
TRAN
is the transient load current step, t
RISE
is the
response time to the application of load, and t
FALL
is the
response time to the removal of load. The worst case
response time can be either at the application or removal of
load. Be sure to check both of these equations at the
minimum and maximum output levels for the worst case
response time.
Input Capacitor Selection - PWM Buck Converter
Use a mix of input bypass capacitors to control the voltage
overshoot across the MOSFETs. Use small ceramic
capacitors for high frequency decoupling and bulk capacitors
to supply the current needed each time the upper MOSFET
turns on. Place the small ceramic capacitors physically close
to the MOSFETs and between the drain of upper MOSFET
and the source of lower MOSFET.
The important parameters for the bulk input capacitance are
the voltage rating and the RMS current rating. For reliable
operation, select bulk capacitors with voltage and current
ratings above the maximum input voltage and largest RMS
current required by the circuit. Their voltage rating should be
at least 1.25 times greater than the maximum input voltage,
while a voltage rating of 1.5 times is a conservative
guideline. For most cases, the RMS current rating
requirement for the input capacitor of a buck regulator is
approximately 1/2 the DC load current.
The maximum RMS current required by the regulator may be
closely approximated through the following equation:
For a through hole design, several electrolytic capacitors
may be needed. For surface mount designs, solid tantalum
capacitors can be used, but caution must be exercised with
regard to the capacitor surge current rating. These
capacitors must be capable of handling the surge-current at
power-up. Some capacitor series available from reputable
manufacturers are surge current tested.
MOSFET Selection - PWM Buck Converter
The ISL6532A requires 2 N-Channel power MOSFETs for
switching power and a third MOSFET to block backfeed from
V
DDQ
to the Input in S3 Mode. These should be selected
based upon r
DS(ON)
, gate supply requirements, and thermal
management requirements.
In high-current applications, the MOSFET power dissipation,
package selection and heatsink are the dominant design
factors. The power dissipation includes two loss
components; conduction loss and switching loss. The
conduction losses are the largest component of power
dissipation for both the upper and the lower MOSFETs.
These losses are distributed between the two MOSFETs
according to duty factor. The switching losses seen when
sourcing current will be different from the switching losses
seen when sinking current. When sourcing current, the
upper MOSFET realizes most of the switching losses. The
lower switch realizes most of the switching losses when the
converter is sinking current (see the equations below).
These equations assume linear voltage-current transitions
and do not adequately model power loss due the reverse-
recovery of the upper and lower MOSFET’s body diode. The
gate-charge losses are dissipated in part by the ISL6532A
and do not significantly heat the MOSFETs. However, large
gate-charge increases the switching interval, t
SW
which
increases the MOSFET switching losses. Ensure that both
MOSFETs are within their maximum junction temperature at
high ambient temperature by calculating the temperature
rise according to package thermal-resistance specifications.
A separate heatsink may be necessary depending upon
MOSFET power, package type, ambient temperature and air
flow.
t
RISE
=
L x I
TRAN
V
IN
- V
OUT
t
FALL
=
L x I
TRAN
V
OUT
I
RMSMAX
V
IN
-------------
I
OUTMAX
2
1
12
------
L
×
f
s
-----------------------------
V
IN
-------------
×
2
×
+
×
=
P
LOWER
= Io
2
x r
DS(ON)
x (1 - D)
Where: D is the duty cycle = V
OUT
/ V
IN
,
t
SW
is the combined switch ON and OFF time, and
f
s
is the switching frequency.
Approximate Losses while Sourcing current
Io
2
r
DS ON
Approximate Losses while Sinking current
P
UPPER
= Io
2
x r
DS(ON)
x D
P
LOWER
Io
2
r
DS ON
)
×
1
-
D
(
)
×
1
2
--
Io
V
IN
×
t
SW
f
s
×
×
+
=
P
UPPER
)
×
D
×
1
2
--
Io
V
IN
×
t
SW
f
s
×
×
+
=
ISL6532A
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