
8
Overcurrent Protection
The overcurrent function protects the converter from a 
shorted output by using the upper MOSFETs on-resistance, 
r
DS(ON)
 to monitor the current. This method enhances the 
converter’s efficiency and reduces cost by eliminating a 
current sensing resistor.
The overcurrent function cycles the soft-start function in a 
hiccup mode to provide fault protection. A resistor (R
OCSET
) 
programs the overcurrent trip level. An internal 200
μ
A 
(typical) current sink develops a voltage across R
OCSET
 that 
is in reference to V
IN
. When the voltage across the upper 
MOSFET (also referenced to V
IN
) exceeds the voltage 
across R
OCSET
, the overcurrent function initiates a soft-start 
sequence. The soft-start function discharges C
SS
 with a 
10
μ
A current sink and inhibits PWM operation. The soft-start 
function recharges C
SS
, and PWM operation resumes with 
the error amplifier clamped to the SS voltage. Should an 
overload occur while recharging C
SS
, the soft-start function 
inhibits PWM operation while fully charging C
SS
 to 4V to 
complete its cycle. Figure 4 shows this operation with an 
overload condition. Note that the inductor current increases 
to over 15A during the C
SS
 charging interval and causes an 
overcurrent trip. The converter dissipates very little power 
with this method. The measured input power for the 
conditions of Figure 4 is 2.5W.
The overcurrent function will trip at a peak inductor current 
(I
PEAK)
 determined by:
where I
OCSET
 is the internal OCSET current source (200
μ
A 
is typical). The OC trip point varies mainly due to the 
MOSFETs r
DS(ON)
 variations. To avoid overcurrent tripping 
in the normal operating load range, find the R
OCSET
 resistor 
from the equation above with:
The maximum r
DS(ON)
 at the highest junction temperature.
1. The minimum I
OCSET
 from the specification table.
2. Determine 
where 
I is the output inductor ripple current.
,
For an equation for the ripple current see the section under 
component guidelines titled 
Output Inductor Selection
.
A small ceramic capacitor should be placed in parallel with 
R
OCSET
 to smooth the voltage across R
OCSET
 in the 
presence of switching noise on the input voltage.
Current Sinking
The ISL6522B incorporates a MOSFET shoot-through 
protection method which allows a converter to sink current 
as well as source current. Care should be exercised when 
designing a converter with the ISL6522B when it is known 
that the converter may sink current.
When the converter is sinking current, it is behaving as a 
boost converter that is regulating its input voltage. This 
means that the converter is boosting current into the V
IN
 rail, 
the voltage that is being down-converted. If there is nowhere 
for this current to go, such as to other distributed loads on 
the V
IN
 rail, through a voltage limiting protection device, or 
other methods, the capacitance on the V
IN
 bus will absorb 
the current. This situation will cause the voltage level of the 
V
IN
 rail to increase. If the voltage level of the rail is boosted 
to a level that exceeds the maximum voltage rating of the 
MOSFETs or the input capacitors, damage may occur to 
these parts. If the bias voltage for the ISL6522B comes from 
the V
IN
 rail, then the maximum voltage rating of the 
ISL6522B may be exceeded and the IC will experience a 
catastrophic failure and the converter will no longer be 
operational. Ensuring that there is a path for the current to 
follow other than the capacitance on the rail will prevent 
these failure modes.
Application Guidelines
Layout Considerations
As in any high frequency switching converter, layout is very 
important. Switching current from one power device to 
another can generate voltage transients across the 
impedances of the interconnecting bond wires and circuit 
traces. These interconnecting impedances should be 
minimized by using wide, short printed circuit traces. The 
critical components should be located as close together as 
possible using ground plane construction or single point 
grounding.
Figure 5 shows the critical power components of the 
converter. To minimize the voltage overshoot the 
interconnecting wires indicated by heavy lines should be part 
of ground or power plane in a printed circuit board. The 
components shown in Figure 6 should be located as close 
together as possible. Please note that the capacitors C
IN
and C
O
 each represent numerous physical capacitors. 
Locate the ISL6522B within three inches of the MOSFETs, 
Q1 and Q2. The circuit traces for the MOSFETs’ gate and 
source connections from the ISL6522B must be sized to 
handle up to 1A peak current.
I
PEAK
I
---------------------------------------------------
R
DS ON
)
=
I
PEAK
 for I
PEAK
I
OUT MAX
)
I
(
)
 2
+
>
PGND
L
O
C
O
LGATE
UGATE
PHASE
Q1
Q2
D2
FIGURE 5. PRINTED CIRCUIT BOARD POWER AND 
GROUND PLANES OR ISLANDS
V
IN
V
OUT
RETURN
ISL6522B
C
IN
L
ISL6522B