- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄383142 > ISL6209CRZ (INTERSIL CORP) High Voltage Synchronous Rectified Buck MOSFET Driver PDF資料下載
參數(shù)資料
| 型號： | ISL6209CRZ |
| 廠商： | INTERSIL CORP |
| 元件分類： | MOSFETs |
| 英文描述： | High Voltage Synchronous Rectified Buck MOSFET Driver |
| 中文描述： | 4 A HALF BRDG BASED MOSFET DRIVER, PQCC8 |
| 封裝： | LEAD FREE, 3 X 3 MM, PLASTIC, MO-220VEEC, QFN-8 |
| 文件頁數(shù)： | 7/10頁 |
| 文件大?。?/td> | 347K |
| 代理商： | ISL6209CRZ |
7
4
The equation governing the dead-time seen in Figure 5 is
expressed as:
The equation can be rewritten to solve for R
DELAY
as
follows:
Internal Bootstrap Diode
This driver features an internal bootstrap Schottky diode.
Simply adding an external capacitor across the BOOT and
PHASE pins completes the bootstrap circuit.
The bootstrap capacitor must have a maximum voltage
rating above the maximum battery voltage plus 5V. The
bootstrap capacitor can be chosen from the following
equation:
Q
BOOT
where Q
GATE
is the amount of gate charge required to fully
charge the gate of the upper MOSFET. The
V
BOOT
term is
defined as the allowable droop in the rail of the upper drive.
As an example, suppose an upper MOSFET has a gate
charge, Q
GATE
, of 25nC at 5V and also assume the droop in
the drive voltage over a PWM cycle is 200mV. One will find
that a bootstrap capacitance of at least 0.125
μ
F is required.
The next larger standard value capacitance is 0.22
μ
F. A
good quality ceramic capacitor is recommended.
FIGURE 4. PROGRAMMABLE DEAD-TIME: TOTAL DELAY = t
PDHUGATE
+ t
delay
1V
1V
DELAY = VCC
DELAY = RESISTOR TO GROUND
t
delay
= 5n - 50ns
GATE A
GATE B
GATE A
GATE B
t
PDHUGATE
D
50
45
40
35
30
25
20
15
10
5
0
0
50
200
100
150
250
300
R
DELAY
(k
)
t
DELAY
FIGURE 5.
ADDITIONAL PROGRAMMED DEAD-TIME
(
t
DELAY
)
vs DELAY RESISTOR VALUE
T
DELAY
160
(
10
15
–
)
R
DELAY
×
×
[
]
6ns
+
=
R
DELAY
T
160
-------------------------–
)
10
15
–
×
=
C
BOOT
-----------------------
≥
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
0.0
0.1 0.2
0.3
0.4
0.5 0.6
0.7
0.8 0.9
1.0
V
BOOT
(V)
50nC
20nC
Q
GATE
= 100nC
FIGURE 6. BOOTSTRAP CAPACITANCE vs BOOT RIPPLE
VOLTAGE
C
B
(
μ
F
ISL6209
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| ISL6209CRZ-T | High Voltage Synchronous Rectified Buck MOSFET Driver |
| ISL6209 | Octal D-Type Edge-Triggered Flip-Flops With 3-State Outputs 20-PDIP -40 to 85 |
| ISL6211 | Crusoe⑩ Processor Core-Voltage Regulator |
| ISL6211CA | Octal D-Type Edge-Triggered Flip-Flops With 3-State Outputs 20-TSSOP -40 to 85 |
| ISL6211CA-T | Crusoe⑩ Processor Core-Voltage Regulator |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ISL6209CRZ-T | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:High Voltage Synchronous Rectified Buck MOSFET Driver |
| ISL6210 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Dual Synchronous Rectified MOSFET Drivers |
| ISL6210CRZ | 功能描述:IC MOSFET DRIVER DUAL SYNC 16QFN RoHS:是 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動器 - 外部開關(guān) 系列:- 標(biāo)準(zhǔn)包裝:50 系列:- 配置:高端 輸入類型:非反相 延遲時間:200ns 電流 - 峰:250mA 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導(dǎo)啟動）:600V 電源電壓:12 V ~ 20 V 工作溫度:-40°C ~ 125°C 安裝類型:通孔 封裝/外殼:8-DIP（0.300"，7.62mm） 供應(yīng)商設(shè)備封裝:8-DIP 包裝:管件 其它名稱:*IR2127 |
| ISL6210CRZ-T | 功能描述:IC MOSFET DRIVER DUAL SYNC 16QFN RoHS:是 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動器 - 外部開關(guān) 系列:- 標(biāo)準(zhǔn)包裝:50 系列:- 配置:高端 輸入類型:非反相 延遲時間:200ns 電流 - 峰:250mA 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導(dǎo)啟動）:600V 電源電壓:12 V ~ 20 V 工作溫度:-40°C ~ 125°C 安裝類型:通孔 封裝/外殼:8-DIP（0.300"，7.62mm） 供應(yīng)商設(shè)備封裝:8-DIP 包裝:管件 其它名稱:*IR2127 |
| ISL6211 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Crusoe⑩ Processor Core-Voltage Regulator |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。