- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄383142 > ISL6209CR-T (INTERSIL CORP) High Voltage Synchronous Rectified Buck MOSFET Driver PDF資料下載
參數(shù)資料
| 型號： | ISL6209CR-T |
| 廠商： | INTERSIL CORP |
| 元件分類： | MOSFETs |
| 英文描述： | High Voltage Synchronous Rectified Buck MOSFET Driver |
| 中文描述： | 4 A HALF BRDG BASED MOSFET DRIVER, PQCC8 |
| 封裝： | 3 X 3 MM, PLASTIC, MO-220VEEC, QFN-8 |
| 文件頁數(shù)： | 8/10頁 |
| 文件大?。?/td> | 347K |
| 代理商： | ISL6209CR-T |
8
Power Dissipation
Package power dissipation is mainly a function of the
switching frequency and total gate charge of the selected
MOSFETs. Calculating the power dissipation in the driver for
a desired application is critical to ensuring safe operation.
Exceeding the maximum allowable power dissipation level
will push the IC beyond the maximum recommended
operating junction temperature of 125°C. The maximum
allowable IC power dissipation for the SO-8 package is
approximately 800mW. When designing the driver into an
application, it is recommended that the following calculation
be performed to ensure safe operation at the desired
frequency for the selected MOSFETs. The power dissipated
by the driver is approximated as:
where f
sw
is the switching frequency of the PWM signal. V
U
and V
L
represent the upper and lower gate rail voltage. Q
U
and Q
L
is the upper and lower gate charge determined by
MOSFET selection and any external capacitance added to
the gate pins. The I
VCC
V
CC
product is the quiescent power
of the driver and is typically negligible.
P
f
sw
1.5V
U
Q
U
V
L
Q
L
+
(
)
I
VCC
V
CC
+
=
FIGURE 7. POWER DISSIPATION vs FREQUENCY
FREQUENCY (kHz)
P
1000
900
800
700
600
500
400
300
200
100
0
0
200
400
600
800
1000 1200
1600
1400
1800 2000
Q
U
=100nC
Q
L
=200nC
Q
U
=50nC
Q
L
=100nC
Q
U
=20nC
Q
L
=50nC
Q
U
=50nC
Q
L
=50nC
ISL6209
相關PDF資料 |
PDF描述 |
|---|---|
| ISL6209CRZ | High Voltage Synchronous Rectified Buck MOSFET Driver |
| ISL6209CRZ-T | High Voltage Synchronous Rectified Buck MOSFET Driver |
| ISL6209 | Octal D-Type Edge-Triggered Flip-Flops With 3-State Outputs 20-PDIP -40 to 85 |
| ISL6211 | Crusoe⑩ Processor Core-Voltage Regulator |
| ISL6211CA | Octal D-Type Edge-Triggered Flip-Flops With 3-State Outputs 20-TSSOP -40 to 85 |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| ISL6209CRZ | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:High Voltage Synchronous Rectified Buck MOSFET Driver |
| ISL6209CRZ-T | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:High Voltage Synchronous Rectified Buck MOSFET Driver |
| ISL6210 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Dual Synchronous Rectified MOSFET Drivers |
| ISL6210CRZ | 功能描述:IC MOSFET DRIVER DUAL SYNC 16QFN RoHS:是 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動器 - 外部開關 系列:- 標準包裝:50 系列:- 配置:高端 輸入類型:非反相 延遲時間:200ns 電流 - 峰:250mA 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導啟動）:600V 電源電壓:12 V ~ 20 V 工作溫度:-40°C ~ 125°C 安裝類型:通孔 封裝/外殼:8-DIP（0.300"，7.62mm） 供應商設備封裝:8-DIP 包裝:管件 其它名稱:*IR2127 |
| ISL6210CRZ-T | 功能描述:IC MOSFET DRIVER DUAL SYNC 16QFN RoHS:是 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動器 - 外部開關 系列:- 標準包裝:50 系列:- 配置:高端 輸入類型:非反相 延遲時間:200ns 電流 - 峰:250mA 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導啟動）:600V 電源電壓:12 V ~ 20 V 工作溫度:-40°C ~ 125°C 安裝類型:通孔 封裝/外殼:8-DIP（0.300"，7.62mm） 供應商設備封裝:8-DIP 包裝:管件 其它名稱:*IR2127 |
發(fā)布緊急采購，3分鐘左右您將得到回復。