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參數(shù)資料
| 型號(hào)： | ISL6209CB |
| 廠(chǎng)商： | INTERSIL CORP |
| 元件分類(lèi)： | 功率晶體管 |
| 英文描述： | High Voltage Synchronous Rectified Buck MOSFET Driver |
| 中文描述： | 4 A HALF BRDG BASED MOSFET DRIVER, PDSO8 |
| 封裝： | PLASTIC, MS-012AA, SOIC-8 |
| 文件頁(yè)數(shù)： | 7/10頁(yè) |
| 文件大?。?/td> | 347K |
| 代理商： | ISL6209CB |
7
4
The equation governing the dead-time seen in Figure 5 is
expressed as:
The equation can be rewritten to solve for R
DELAY
as
follows:
Internal Bootstrap Diode
This driver features an internal bootstrap Schottky diode.
Simply adding an external capacitor across the BOOT and
PHASE pins completes the bootstrap circuit.
The bootstrap capacitor must have a maximum voltage
rating above the maximum battery voltage plus 5V. The
bootstrap capacitor can be chosen from the following
equation:
Q
BOOT
where Q
GATE
is the amount of gate charge required to fully
charge the gate of the upper MOSFET. The
V
BOOT
term is
defined as the allowable droop in the rail of the upper drive.
As an example, suppose an upper MOSFET has a gate
charge, Q
GATE
, of 25nC at 5V and also assume the droop in
the drive voltage over a PWM cycle is 200mV. One will find
that a bootstrap capacitance of at least 0.125
μ
F is required.
The next larger standard value capacitance is 0.22
μ
F. A
good quality ceramic capacitor is recommended.
FIGURE 4. PROGRAMMABLE DEAD-TIME: TOTAL DELAY = t
PDHUGATE
+ t
delay
1V
1V
DELAY = VCC
DELAY = RESISTOR TO GROUND
t
delay
= 5n - 50ns
GATE A
GATE B
GATE A
GATE B
t
PDHUGATE
D
50
45
40
35
30
25
20
15
10
5
0
0
50
200
100
150
250
300
R
DELAY
(k
)
t
DELAY
FIGURE 5.
ADDITIONAL PROGRAMMED DEAD-TIME
(
t
DELAY
)
vs DELAY RESISTOR VALUE
T
DELAY
160
(
10
15
–
)
R
DELAY
×
×
[
]
6ns
+
=
R
DELAY
T
160
-------------------------–
)
10
15
–
×
=
C
BOOT
-----------------------
≥
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
0.0
0.1 0.2
0.3
0.4
0.5 0.6
0.7
0.8 0.9
1.0
V
BOOT
(V)
50nC
20nC
Q
GATE
= 100nC
FIGURE 6. BOOTSTRAP CAPACITANCE vs BOOT RIPPLE
VOLTAGE
C
B
(
μ
F
ISL6209
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PDF描述 |
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| ISL6209CB-T | High Voltage Synchronous Rectified Buck MOSFET Driver |
| ISL6209CBZ | High Voltage Synchronous Rectified Buck MOSFET Driver |
| ISL6209CBZ-T | High Voltage Synchronous Rectified Buck MOSFET Driver |
| ISL6209CR | High Voltage Synchronous Rectified Buck MOSFET Driver |
| ISL6209CR-T | High Voltage Synchronous Rectified Buck MOSFET Driver |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ISL6209CB-T | 功能描述:IC MOSFET DRVR SYNC BUCK 8-SOIC RoHS:否 類(lèi)別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動(dòng)器 - 外部開(kāi)關(guān) 系列:- 標(biāo)準(zhǔn)包裝:50 系列:- 配置:低端 輸入類(lèi)型:非反相 延遲時(shí)間:40ns 電流 - 峰:9A 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導(dǎo)啟動(dòng)）:- 電源電壓:4.5 V ~ 35 V 工作溫度:-40°C ~ 125°C 安裝類(lèi)型:表面貼裝 封裝/外殼:TO-263-6，D²Pak（5 引線(xiàn)+接片），TO-263BA 供應(yīng)商設(shè)備封裝:TO-263 包裝:管件 |
| ISL6209CBZ | 功能描述:功率驅(qū)動(dòng)器IC P6 HV SYNCHCT BUCK MSFT W/POR & DELAY RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類(lèi)型:Low Cost High or Low Side MOSFET Driver 上升時(shí)間: 下降時(shí)間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| ISL6209CBZ-T | 功能描述:功率驅(qū)動(dòng)器IC P6 HV SYNCHCT BUCK MSFT W/POR & DELAY RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類(lèi)型:Low Cost High or Low Side MOSFET Driver 上升時(shí)間: 下降時(shí)間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| ISL6209CR | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| ISL6209CR-T | 制造商:INTERSIL 制造商全稱(chēng):Intersil Corporation 功能描述:High Voltage Synchronous Rectified Buck MOSFET Driver |
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