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參數(shù)資料
| 型號： | ISL6209CB-T |
| 廠商： | INTERSIL CORP |
| 元件分類： | MOSFETs |
| 英文描述： | High Voltage Synchronous Rectified Buck MOSFET Driver |
| 中文描述： | 4 A HALF BRDG BASED MOSFET DRIVER, PDSO8 |
| 封裝： | PLASTIC, MS-012AA, SOIC-8 |
| 文件頁數(shù)： | 7/10頁 |
| 文件大小： | 347K |
| 代理商： | ISL6209CB-T |
7
4
The equation governing the dead-time seen in Figure 5 is
expressed as:
The equation can be rewritten to solve for R
DELAY
as
follows:
Internal Bootstrap Diode
This driver features an internal bootstrap Schottky diode.
Simply adding an external capacitor across the BOOT and
PHASE pins completes the bootstrap circuit.
The bootstrap capacitor must have a maximum voltage
rating above the maximum battery voltage plus 5V. The
bootstrap capacitor can be chosen from the following
equation:
Q
BOOT
where Q
GATE
is the amount of gate charge required to fully
charge the gate of the upper MOSFET. The
V
BOOT
term is
defined as the allowable droop in the rail of the upper drive.
As an example, suppose an upper MOSFET has a gate
charge, Q
GATE
, of 25nC at 5V and also assume the droop in
the drive voltage over a PWM cycle is 200mV. One will find
that a bootstrap capacitance of at least 0.125
μ
F is required.
The next larger standard value capacitance is 0.22
μ
F. A
good quality ceramic capacitor is recommended.
FIGURE 4. PROGRAMMABLE DEAD-TIME: TOTAL DELAY = t
PDHUGATE
+ t
delay
1V
1V
DELAY = VCC
DELAY = RESISTOR TO GROUND
t
delay
= 5n - 50ns
GATE A
GATE B
GATE A
GATE B
t
PDHUGATE
D
50
45
40
35
30
25
20
15
10
5
0
0
50
200
100
150
250
300
R
DELAY
(k
)
t
DELAY
FIGURE 5.
ADDITIONAL PROGRAMMED DEAD-TIME
(
t
DELAY
)
vs DELAY RESISTOR VALUE
T
DELAY
160
(
10
15
–
)
R
DELAY
×
×
[
]
6ns
+
=
R
DELAY
T
160
-------------------------–
)
10
15
–
×
=
C
BOOT
-----------------------
≥
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
0.0
0.1 0.2
0.3
0.4
0.5 0.6
0.7
0.8 0.9
1.0
V
BOOT
(V)
50nC
20nC
Q
GATE
= 100nC
FIGURE 6. BOOTSTRAP CAPACITANCE vs BOOT RIPPLE
VOLTAGE
C
B
(
μ
F
ISL6209
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| ISL6209CBZ | High Voltage Synchronous Rectified Buck MOSFET Driver |
| ISL6209CBZ-T | High Voltage Synchronous Rectified Buck MOSFET Driver |
| ISL6209CR | High Voltage Synchronous Rectified Buck MOSFET Driver |
| ISL6209CR-T | High Voltage Synchronous Rectified Buck MOSFET Driver |
| ISL6209CRZ | High Voltage Synchronous Rectified Buck MOSFET Driver |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ISL6209CBZ | 功能描述:功率驅(qū)動器IC P6 HV SYNCHCT BUCK MSFT W/POR & DELAY RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| ISL6209CBZ-T | 功能描述:功率驅(qū)動器IC P6 HV SYNCHCT BUCK MSFT W/POR & DELAY RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| ISL6209CR | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| ISL6209CR-T | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:High Voltage Synchronous Rectified Buck MOSFET Driver |
| ISL6209CRZ | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:High Voltage Synchronous Rectified Buck MOSFET Driver |
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