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參數(shù)資料
| 型號： | ISL6208CR-T |
| 廠商： | INTERSIL CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | High Voltage Synchronous Rectified Buck MOSFET Driver |
| 中文描述： | 4 A HALF BRDG BASED MOSFET DRIVER, PQCC8 |
| 封裝： | 3 X 3 MM, PLASTIC, MO-220, QFN-8 |
| 文件頁數(shù)： | 10/10頁 |
| 文件大?。?/td> | 325K |
| 代理商： | ISL6208CR-T |
10
All Intersil U.S. products are manufactured, assembled and tested utilizing ISO9000 quality systems.
Intersil Corporation’s quality certifications can be viewed at www.intersil.com/design/quality
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time without
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see www.intersil.com
Small Outline Plastic Packages (SOIC)
INDEX
AREA
E
D
N
1
2
3
-B-
0.25(0.010)
C A
M
B S
e
-A-
L
B
M
-C-
A1
A
SEATING PLANE
0.10(0.004)
h x 45
o
C
H
μ
α
0.25(0.010)
B
M
M
NOTES:
1. Symbols are defined in the “MO Series Symbol List” in Section 2.2 of
Publication Number 95.
2. Dimensioning and tolerancing per ANSI Y14.5M
-
1982.
3. Dimension “D” does not include mold flash, protrusions or gate burrs.
Mold flash, protrusion and gate burrs shall not exceed 0.15mm (0.006
inch) per side.
4. Dimension “E” does not include interlead flash or protrusions. Inter-
lead flash and protrusions shall not exceed 0.25mm (0.010 inch) per
side.
5. The chamfer on the body is optional. If it is not present, a visual index
feature must be located within the crosshatched area.
6. “L” is the length of terminal for soldering to a substrate.
7. “N” is the number of terminal positions.
8. Terminal numbers are shown for reference only.
9. The lead width “B”, as measured 0.36mm (0.014 inch) or greater
above the seating plane, shall not exceed a maximum value of
0.61mm (0.024 inch).
10. Controlling dimension: MILLIMETER. Converted inch dimensions
are not necessarily exact.
M8.15
(JEDEC MS-012-AA ISSUE C)
8 LEAD NARROW BODY SMALL OUTLINE PLASTIC
PACKAGE
SYMBOL
INCHES
MILLIMETERS
NOTES
MIN
MAX
MIN
MAX
A
0.0532
0.0688
1.35
1.75
-
A1
0.0040
0.0098
0.10
0.25
-
B
0.020
0.33
0.51
9
C
0.0075
0.0098
0.19
0.25
-
D
0.1890
0.1968
4.80
5.00
3
E
0.1497
0.1574
3.80
4.00
4
e
0.050 BSC
1.27 BSC
-
H
0.2284
0.2440
5.80
6.20
-
h
0.0099
0.0196
0.25
0.50
5
L
0.016
0.050
0.40
1.27
6
N
8
8
7
α
0
o
8
o
0
o
8
o
-
Rev. 0 12/93
ISL6208
相關PDF資料 |
PDF描述 |
|---|---|
| ISL6208 | High Voltage Synchronous Rectified Buck MOSFET Driver(高電壓，同步整流降壓MOSFET驅動器) |
| ISL6209CB | High Voltage Synchronous Rectified Buck MOSFET Driver |
| ISL6209CB-T | High Voltage Synchronous Rectified Buck MOSFET Driver |
| ISL6209CBZ | High Voltage Synchronous Rectified Buck MOSFET Driver |
| ISL6209CBZ-T | High Voltage Synchronous Rectified Buck MOSFET Driver |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| ISL6208CRZ | 功能描述:功率驅動器IC VER OF ISL6208CR IBM FAB RoHS:否 制造商:Micrel 產品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| ISL6208CRZ-T | 功能描述:功率驅動器IC VER OF ISL6208CR-T I BM FAB RoHS:否 制造商:Micrel 產品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| ISL6208IB | 制造商:Rochester Electronics LLC 功能描述: 制造商:Intersil Corporation 功能描述: |
| ISL6208IBZ | 功能描述:IC MOSFET DRVR SYNC BUCK 8-SOIC RoHS:是 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅動器 - 外部開關 系列:- 標準包裝:6,000 系列:* |
| ISL6208IBZ-T | 功能描述:IC MOSFET DRVR SYNC BUCK 8-SOIC RoHS:是 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅動器 - 外部開關 系列:- 標準包裝:5 系列:- 配置:低端 輸入類型:非反相 延遲時間:600ns 電流 - 峰:12A 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導啟動）:- 電源電壓:14.2 V ~ 15.8 V 工作溫度:-20°C ~ 60°C 安裝類型:通孔 封裝/外殼:21-SIP 模塊 供應商設備封裝:模塊 包裝:散裝 配用:BG2A-NF-ND - KIT DEV BOARD FOR IGBT 其它名稱:835-1063 |
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