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參數(shù)資料
| 型號： | ISL6207HRZ-T |
| 廠商： | INTERSIL CORP |
| 元件分類： | MOSFETs |
| 英文描述： | High Voltage Synchronous Rectified Buck MOSFET Driver |
| 中文描述： | 4 A HALF BRDG BASED MOSFET DRIVER, PQCC8 |
| 封裝： | 3 X 3 MM, ROHS COMPLIANT, PLASTIC, QFN-8 |
| 文件頁數(shù)： | 7/9頁 |
| 文件大小： | 292K |
| 代理商： | ISL6207HRZ-T |
7
FN9075.7
July 25, 2005
Thermal Management
For maximum thermal performance in high current, high
switching frequency applications, connecting the thermal
pad of the QFN part to the power ground with a via, or
placing a low noise copper plane underneath the SOIC part
is recommended. This heat spreading allows the part to
achieve its full thermal potential.
Suppressing MOSFET Gate Leakage
With VCC at ground potential, UGATE and LGATE are high
impedance. In this state, any stray leakage has the potential
to deliver charge to either gate. If UGATE receives sufficient
charge to bias the device on (Note: Internal circuitry prevents
leakage currents from charging above 1.8V), a low
impedance path will be connected between the MOSFET
drain and PHASE. If the input power supply is present and
active, the system could see potentially damaging currents.
Worst-case leakage currents are on the order of pico-amps;
therefore, a 10k
resistor, connected from UGATE to
PHASE, is more than sufficient to bleed off any stray leakage
current. This resistor will not affect the normal performance
of the driver or reduce its efficiency.
ISL6207
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