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參數(shù)資料
| 型號： | ISL6207CR-T |
| 廠商： | INTERSIL CORP |
| 元件分類： | MOSFETs |
| 英文描述： | High Voltage Synchronous Rectified Buck MOSFET Driver |
| 中文描述： | 4 A HALF BRDG BASED MOSFET DRIVER, PQCC8 |
| 封裝： | 3 X 3 MM, PLASTIC, QFN-8 |
| 文件頁數(shù)： | 6/9頁 |
| 文件大?。?/td> | 292K |
| 代理商： | ISL6207CR-T |
6
FN9075.7
July 25, 2005
The next larger standard value capacitance is 0.22
μ
F. A
good quality ceramic capacitor is recommended.
Power Dissipation
Package power dissipation is mainly a function of the
switching frequency and total gate charge of the selected
MOSFETs. Calculating the power dissipation in the driver for
a desired application is critical to ensuring safe operation.
Exceeding the maximum allowable power dissipation level
will push the IC beyond the maximum recommended
operating junction tem
perature of 125
°
C. The maximum
allowable IC power dissipation for the SO-8 package is
approximately 800mW. When designing the driver into an
application, it is recommende
d that the following calculation
be performed to ensure safe operation at the desired
frequency for the selected MOSFETs. The power dissipated
by the driver is approximated as:
where f
sw
is the switching frequency of the PWM signal. V
U
and V
L
represent the upper and lower gate rail voltage. Q
U
and Q
L
is the upper and lower gate charge determined by
MOSFET s
election and any external capacitance added to
the gate pins. The I
DDQ
V
CC
product is the quiescent power
of the driver and is typically negligible.
Layout Considerations
Reducing Phase Ring
The parasitic inductances of the PCB and the power devices
(both upper and lower FETs) could cause serious ringing,
exceeding absolute maximum rating of the devices. The
negative ringing at the edges of the PHASE node could add
charges to the bootstrap capacitor through the internal
bootstrap diode, in some cases, it could cause over stress
across BOOT and PHASE pins. Therefore, user should do a
careful layout and select proper MOSFETs and drivers. The
D
2
PAK and DPAK package MOSFETs have high parasitic
lead inductance, which can exacerbate this issue. FET
selection plays an important role in reducing PHASE ring. If
higher inductance FETs must be used, a Schottky diode is
recommended across the lower MOSFET to clamp negative
PHASE ring.
A good layout would help reduce the ringing on the phase
and gate nodes significantly:
Avoid uses via for decoupling components across BOOT
and PHASE pins and in between VCC and GND pins. The
decoupling loop should be short.
All power traces (UGATE, PHASE, LGATE, GND, VCC)
should be short and wide, and avoid using via; otherwise,
use two vias for interconnection when possible.
Keep SOURCE of upper FET and DRAIN of lower FET as
close as thermally possible.
Keep connection in between SOURCE of lower FET and
power ground wide and short.
Input capacitors should be placed as close to the DRAIN
of upper FET and SOURCE of lower FETs as thermally
possible.
Note: Refer to Intersil Tech Brief TB447 for more information.
0.0
0.4
0.1
0.2
0.3
0.5
0.6
0.7
0.8
0.9
1.0
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
V
BOOT
(V)
C
B
(
FIGURE 2. BOOTSTRAP CAPACITANCE vs BOOT RIPPLE
VOLTAGE
Q
GATE
= 100nC
50nC
20nC
P
f
sw
1.5V
U
Q
U
V
L
Q
L
+
(
)
I
DDQ
V
CC
+
=
FREQUENCY (kHz)
P
FIGURE 3. POWER DISSIPATION vs FREQUENCY
0
800
200
400
600
1000 1200 1400 1600 1800 2000
1000
900
800
700
600
500
400
300
200
100
0
Q
U
=20nC
Q
L
=50nC
Q
L
=50nC
Q
U
=50nC
Q
U
=50nC
Q
L
=100nC
Q
U
=100nC
Q
L
=200nC
ISL6207
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| ISL6207HRZ | High Voltage Synchronous Rectified Buck MOSFET Driver |
| ISL6207HRZ-T | High Voltage Synchronous Rectified Buck MOSFET Driver |
| ISL6207CBZ-T | High Voltage Synchronous Rectified Buck MOSFET Driver |
| ISL6207 | High Voltage Synchronous Rectified Buck MOSFET Driver |
| ISL6207CB | High Voltage Synchronous Rectified Buck MOSFET Driver |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ISL6207CRZ | 功能描述:功率驅(qū)動器IC VER OF ISL6207CR RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| ISL6207CRZA | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:High Voltage Synchronous Rectified Buck MOSFET Driver |
| ISL6207CRZA-T | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:High Voltage Synchronous Rectified Buck MOSFET Driver |
| ISL6207CRZ-T | 功能描述:功率驅(qū)動器IC VER OF ISL6207CR-T RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| ISL6207HBZ | 功能描述:功率驅(qū)動器IC VER OF ISL6207CB W/- 10 TO +100 TEMP RNG RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
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