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參數(shù)資料
| 型號： | ISL6206CB |
| 廠商： | INTERSIL CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | High Voltage Synchronous Rectified Buck MOSFET Driver |
| 中文描述： | 1.1 A HALF BRDG BASED MOSFET DRIVER, PDSO8 |
| 封裝： | PLASTIC, SOIC-8 |
| 文件頁數(shù)： | 4/6頁 |
| 文件大?。?/td> | 97K |
| 代理商： | ISL6206CB |
4
Functional Pin Description
UGATE (Pin 1)
Upper gate drive output. Connect to the gate of the high-side
N-Channel power MOSFET.
BOOT (Pin 2)
Floating bootstrap supply pin for the upper gate drive.
Connect the bootstrap capacitor between this pin and the
PHASE pin. The bootstrap capacitor provides the charge to
turn on the upper MOSFET. See the Bootstrap Diode and
Capacitor section under DESCRIPTION for guidance in
choosing the appropriate capacitor value.
PWM (Pin 3)
The PWM signal is the control input for the driver. The PWM
signal can enter three distinct states during operation, see the
three-statePWMInputsectionunder DESCRIPTIONfor further
details. Connect this pin to the PWM output of any Intersil
multiphase controllers.
GND (Pin 4)
Ground pin. All signals are referenced to this node.
LGATE (Pin 5)
Lower gate drive output. Connect to the gate of the low-side
N-Channel power MOSFET.
VCC (Pin 6)
Connect this pin to a +5V bias supply. Place a high quality
bypass capacitor from this pin to GND.
NC (Pin 7)
No connection. Leave this pin floating.
PHASE (Pin 8)
Connect this pin to the source of the upper MOSFET and the
drain of the lower MOSFET. This pin provides a return path
for the upper gate driver.
Description
Operation
The ISL6206 dual MOSFET driver controls both high-side and
low-side N-Channel FETs from one externally provided PWM
signal.
A rising edge on PWM initiates the turn-off of the lower
MOSFET (see Timing Diagram). After a short propagation
delay [t
PDLLGATE
], the lower gate begins to fall. Typical fall
times [t
FLGATE
] are provided in the Electrical Specifications
section. Adaptive shoot-through circuitry monitors the
LGATE voltage and determines the upper gate delay time
[t
PDHUGATE
] based on how quickly the LGATE voltage
drops below 1V. This prevents both the lower and upper
MOSFETs from conducting simultaneously or shoot-
through. Once this delay period is complete the upper gate
drive begins to rise [t
RUGATE
] and the upper MOSFET turns
on.
A falling transition on PWM indicates the turn-off of the upper
MOSFET and the turn-on of the lower MOSFET. A short
propagation delay [t
PDLUGATE
] is encountered before the
upper gate begins to fall [t
FUGATE
]. Again, the adaptive
shoot-through circuitry determines the lower gate delay time,
t
PDHLGATE
. The upper MOSFET gate voltage is monitored
and the lower gate is allowed to rise after the upper MOSFET
gate-to-source voltage drops below 1V. The lower gate then
rises [t
RLGATE
], turning on the lower MOSFET.
Timing Diagram
PWM
UGATE
LGATE
t
PDLLGATE
t
FLGATE
t
PDHUGATE
t
RUGATE
t
PDLUGATE
t
FUGATE
t
PDHLGATE
t
RLGATE
ISL6206
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ISL6206CB-T | 制造商:Rochester Electronics LLC 功能描述:- Tape and Reel |
| ISL6207 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:High Voltage Synchronous Rectified Buck MOSFET Driver |
| ISL6207CB | 功能描述:IC MOSFET DRVR SYNC BUCK 8-SOIC RoHS:否 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動器 - 外部開關(guān) 系列:- 標準包裝:50 系列:- 配置:低端 輸入類型:非反相 延遲時間:40ns 電流 - 峰:9A 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導啟動）:- 電源電壓:4.5 V ~ 35 V 工作溫度:-40°C ~ 125°C 安裝類型:表面貼裝 封裝/外殼:TO-263-6，D²Pak（5 引線+接片），TO-263BA 供應商設備封裝:TO-263 包裝:管件 |
| ISL6207CB-T | 功能描述:IC MOSFET DRVR SYNC BUCK 8-SOIC RoHS:否 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動器 - 外部開關(guān) 系列:- 標準包裝:50 系列:- 配置:低端 輸入類型:非反相 延遲時間:40ns 電流 - 峰:9A 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導啟動）:- 電源電壓:4.5 V ~ 35 V 工作溫度:-40°C ~ 125°C 安裝類型:表面貼裝 封裝/外殼:TO-263-6，D²Pak（5 引線+接片），TO-263BA 供應商設備封裝:TO-263 包裝:管件 |
| ISL6207CBZ | 功能描述:功率驅(qū)動器IC VERSION OF ISL6207CB RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
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