6 FN6639.3 November 29, 2012 Electrical Specifications V S <" />
鍙冩暩(sh霉)璩囨枡
鍨嬭櫉(h脿o)锛� ISL28210FBZ-T13
寤犲晢锛� Intersil
鏂囦欢闋佹暩(sh霉)锛� 20/23闋�
鏂囦欢澶�?銆�?/td> 0K
鎻忚堪锛� IC OPAMP JFET 12.5MHZ DUAL 8SOIC
鐢�(ch菐n)鍝佸煿瑷�(x霉n)妯″锛� Solutions for Industrial Control Applications
妯�(bi膩o)婧�(zh菙n)鍖呰锛� 2,500
鏀惧ぇ鍣ㄩ鍨嬶細 J-FET
闆昏矾鏁�(sh霉)锛� 2
杞�(zhu菐n)鎻涢€熺巼锛� 20 V/µs
澧炵泭甯跺绌嶏細 12.5MHz
闆绘祦 - 杓稿叆鍋忓锛� 2pA
闆诲 - 杓稿叆鍋忕Щ锛� 300µV
闆绘祦 - 闆绘簮锛� 2.55mA
闆绘祦 - 杓稿嚭 / 閫氶亾锛� 50mA
闆诲 - 闆绘簮锛屽柈璺�/闆欒矾(±)锛� 9 V ~ 40 V锛�±4.5 V ~ 20 V
宸ヤ綔婧害锛� -40°C ~ 125°C
瀹夎椤炲瀷锛� 琛ㄩ潰璨艰
灏佽/澶栨锛� 8-SOIC锛�0.154"锛�3.90mm 瀵級
渚涙噳(y墨ng)鍟嗚ō(sh猫)鍌欏皝瑁濓細 8-SOIC
鍖呰锛� 甯跺嵎 (TR)
ISL28110, ISL28210
6
FN6639.3
November 29, 2012
Electrical Specifications V
S = 卤15V, VCM = 0, VO = 0V, TA = +25掳C, unless otherwise noted. Boldface limits apply over the operating
temperature range, -40掳C to +125掳C.
PARAMETER
DESCRIPTION
CONDITIONS
MIN
(Note 7)
TYP
MAX
(Note 7)
UNITS
INPUT CHARACTERISTICS
VOS
Input Offset Voltage
-300
300
V
-40掳C < TA < +125掳C
-1300
1300
V
TCVOS
Input Offset Voltage Temperature
Coefficient (Grade C)
-40掳C < TA < +125掳C
1
10
V/掳C
IB
Input Bias Current
ISL28110
4.5
卤2
4.5
pA
-40掳C < TA < +60掳C
-25
25
pA
-40掳C < TA < +85掳C
-85
85
pA
-40掳C < TA < +125掳C
-950
950
pA
IB
Input Bias Current
ISL28210
5
卤2
5
pA
-40掳C < TA < +60掳C
-350
350
pA
-40掳C < TA < +85掳C
-700
700
pA
-40掳C < TA < +125掳C
-3600
3600
pA
IOS
Input Offset Current
ISL28110
-2.5
卤0.5
2.5
pA
-40掳C < TA < +60掳C
-25
25
pA
-40掳C < TA < +85掳C
-85
85
pA
-40掳C < TA < +125掳C
-650
650
pA
IOS
Input Offset Current
ISL28210
-2.5
卤0.5
2.5
pA
-40掳C < TA < +60掳C
-285
285
pA
-40掳C < TA < +85掳C
-445
445
pA
-40掳C < TA < +125掳C
-2000
2000
pA
CIN-DIFF
Differential Input Capacitance
8.3
pF
CIN-CM
Common Mode Input Capacitance
11.8
pF
RIN-DIFF
Differential Input Resistance
530
G
惟
RIN-CM
Common Mode Input Resistance
560
G
惟
VCMIR
Common Mode Input Voltage Range
Guaranteed by CMRR test
V- +1.5
V+ -1.5
V
CMRR
Common Mode Rejection Ratio
VCM = -13.5V to +13.5V
80
100
dB
AVOL
Open-loop Gain
RL = 10k惟 to ground
VO = -12.5V to +12.5V
107
109
dB
-40掳C < TA < +125掳C
106
dB
DYNAMIC PERFORMANCE
GBWP
Gain-bandwidth Product
G = 100, RL = 100k惟, CL = 4pF
11
12.5
MHz
SR
Slew Rate, VOUT 20% to 80%
G = -1, RL = 2k惟, 10V Step
20
V/s
THD+N
Total Harmonic Distortion + Noise
G = 1, f = 1kHz,
10VP-P, RL = 2k惟
0.00025
%
G = 1, f = 1kHz,
10VP-P, RL = 600惟
0.0003
%
ts
Settling Time to 0.1%
10V Step; 10% to VOUT
AV = 1, VOUT = 10VP-P, RL =2k惟 to VCM
1.3
s
Settling Time to 0.01%
10V Step; 10% to VOUT
AV = 1, VOUT = 10VP-P, RL =2k惟 to VCM
1.6
s
鐩搁棞(gu膩n)PDF璩囨枡
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鐩搁棞(gu膩n)浠ｇ悊鍟�/鎶€琛�(sh霉)鍙冩暩(sh霉)
鍙冩暩(sh霉)鎻忚堪
ISL28210FBZ-T7 鍔熻兘鎻忚堪:IC OPAMP JFET 12.5MHZ DUAL 8SOIC RoHS:鏄� 椤炲垾:闆嗘垚闆昏矾 (IC) >> Linear - Amplifiers - Instrumentation 绯诲垪:- 妯�(bi膩o)婧�(zh菙n)鍖呰:75 绯诲垪:MicroAmplifier™ 鏀惧ぇ鍣ㄩ鍨�:閫氱敤 闆昏矾鏁�(sh霉):1 杓稿嚭椤炲瀷:婊挎摵骞� 杞�(zhu菐n)鎻涢€熺巼:0.03 V/µs 澧炵泭甯跺绌�:100kHz -3db甯跺:- 闆绘祦 - 杓稿叆鍋忓:1pA 闆诲 - 杓稿叆鍋忕Щ:60µV 闆绘祦 - 闆绘簮:20µA 闆绘祦 - 杓稿嚭 / 閫氶亾:5mA 闆诲 - 闆绘簮锛屽柈璺�/闆欒矾(±):2.3 V ~ 5.5 V 宸ヤ綔婧害:-40°C ~ 85°C 瀹夎椤炲瀷:琛ㄩ潰璨艰 灏佽/澶栨:8-SOIC锛�0.154"锛�3.90mm 瀵級 渚涙噳(y墨ng)鍟嗚ō(sh猫)鍌欏皝瑁�:8-SOIC 鍖呰:绠′欢
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ISL28210SOICEVAL1Z 鍔熻兘鎻忚堪:EVAL BOARD FOR ISL28210 8SOIC RoHS:鏄� 椤炲垾:绶ㄧ▼鍣�锛岄枊鐧�(f膩)绯荤当(t菕ng) >> 瑭曚及鏉� - 閬�(y霉n)绠楁斁澶у櫒 绯诲垪:- 鐢�(ch菐n)鍝佸煿瑷�(x霉n)妯″:Lead (SnPb) Finish for COTS Obsolescence Mitigation Program 妯�(bi膩o)婧�(zh菙n)鍖呰:1 绯诲垪:-
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鎴戠殑鑱�(li谩n)绯绘柟寮�

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