12 FN6560.6 February 19, 2014 Long Term VOS Drift
參數(shù)資料
型號(hào)： ISL28133FRUZ-T7
廠商： Intersil
文件頁(yè)數(shù)： 4/20頁(yè)
文件大?。?/td> 0K
描述： IC OPAMP CHOPPER RRIO 6TDFN
產(chǎn)品培訓(xùn)模塊： Patient Monitoring and Diagnostic Equipment Solutions
Solutions for Industrial Control Applications
標(biāo)準(zhǔn)包裝： 3,000
放大器類型： 斷路器（零漂移）
電路數(shù)： 1
輸出類型： 滿擺幅
轉(zhuǎn)換速率： 0.2 V/µs
增益帶寬積： 400kHz
電流 - 輸入偏壓： 30pA
電壓 - 輸入偏移： 2µV
電流 - 電源： 18µA
電流 - 輸出 / 通道： 26mA
電壓 - 電源，單路/雙路(±)： 1.8 V ~ 5.5 V，±0.9 V ~ 2.75 V
工作溫度： -40°C ~ 125°C
安裝類型： 表面貼裝
封裝/外殼： 6-UFDFN 裸露焊盤(pán)
供應(yīng)商設(shè)備封裝： 6-UTDFN-EP（1.6x1.6）
包裝： 帶卷 (TR)
ISL28133
12
FN6560.6
February 19, 2014
Long Term VOS Drift
Figure 37 shows a plot of daily VOS drift measurements of 30
individual ISL28133 amplifiers over a continuous 572 day period
at +25°C. The 30 units were connected in a gain of 10k,
mounted on a single PC board and kept at room temp. The 30
amplifier outputs were measured daily by a DVM and scanner
under computer control. The daily VOS measurements were
subtracted from the initial VOS value to calculate the VOS shift.
The test board was powered from a UPS to maintain
uninterrupted power to the test units. Three instances of lost
measurement data ranging from 2 days to 2 weeks due to power
loss to the measurement scanner were detected, and data were
interpolated.
The change in amplifier VOS over the 572 day period for all 30
amplifiers (see Figure 38) was less than ±100nV, and no clear
VOS long term drift trend was evident in the data. The excellent
long term drift performance is a result of the chopper amplifier’s
ability to measure and correct VOS errors, leaving only the VOS
error contribution due to changes in the long term stability of the
external components (see Figure 39).
ISL28133 SPICE Model
Figure 40 shows the SPICE model schematic and Figure 41
shows the net list for the ISL28133 SPICE model. The model is a
simplified version of the actual device and simulates important
parameters such as noise, Slew Rate, Gain and Phase. The
model uses typical parameters from the ISL28133. The poles
and zeros in the model were determined from the actual open
and closed-loop gain and phase response. This enables the
model to present an accurate AC representation of the actual
device. The model is configured for ambient temperature of
+25°C.
Figures 42 through 49 show the characterization vs simulation
results for the Noise Density, Frequency Response vs Close Loop
Gain, Gain vs Frequency vs CL and Large Signal Step Response (4V).
FIGURE 37. LONG TERM DRIFT (VOS vs TIME) FOR 30 UNITS
FIGURE 38. LONG TERM DRIFT (VOS vs TIME) FOR A SINGLE UNIT
-1.0
-0.8
-0.6
-0.4
-0.2
0.0
0.2
0.4
0.6
0.8
1.0
0
30
60
90 120 180 240 300 360 420 480 540 600
V
O
S
(
V
)
TIME (DAYS)
-1.0
-0.8
-0.6
-0.4
-0.2
0.0
0.2
0.4
0.6
0.8
1.0
0
30
60
90 120 180 240 300 360 420 480 540 600
V
O
S
(
V
)
TIME (DAYS)
-
+
10
1k
VOUT
100k
10
100k
FIGURE 39. LONG TERM DRIFT TEST CIRCUIT
+2.5V
-2.5V
ACL = 10kV/V
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