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參數(shù)資料
| 型號： | IS9-2100ARH-Q |
| 廠商： | INTERSIL CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | Radiation Hardened High Frequency Half Bridge Driver |
| 中文描述： | 1.5 A HALF BRDG BASED MOSFET DRIVER, CDFP16 |
| 封裝： | CERAMIC, DFP-16 |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 61K |
| 代理商： | IS9-2100ARH-Q |
2
All Intersil products are manufactured, assembled and tested utilizing ISO9000 quality systems.
Intersil Corporation’s quality certifications can be viewed at www.intersil.com/design/quality
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice.
Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable.
However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its
use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see www.intersil.com
Die Characteristics
DIE DIMENSIONS:
4820
μ
m x 3300
μ
m (190 mils x 130 mils)
Thickness: 483
μ
m
±
25.4
μ
m (19 mils
±
1 mil)
INTERFACE MATERIALS:
Glassivation:
Type: PSG (Phosphorous Silicon Glass)
Thickness: 8.0k
±
1.0k
Top Metallization:
Type: ALSiCu
Thickness: 16.0k
±
2k
Substrate:
Radiation Hardened Silicon Gate,
Dielectric Isolation
Backside Finish:
Silicon
ASSEMBLY RELATED INFORMATION:
Substrate Potential:
Unbiased (DI)
ADDITIONAL INFORMATION:
Worst Case Current Density:
<2.0 x 10
5
A/cm
2
Transistor Count:
542
Metallization Mask Layout
IS-2100ARH
SD (13)
LIN (14)
V
SS
(15)
COM (2)
V
CC
(3)
HIN (12)
V
DD
(11)
HO (8)
VB (7)
VS (6)
LO (1)
IS-2100ARH
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