- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄377575 > IS65LV256AL-45UA3 (INTEGRATED SILICON SOLUTION INC) 32K x 8 LOW VOLTAGE CMOS STATIC RAM PDF資料下載
參數(shù)資料
| 型號(hào)： | IS65LV256AL-45UA3 |
| 廠商： | INTEGRATED SILICON SOLUTION INC |
| 元件分類(lèi)： | DRAM |
| 英文描述： | 32K x 8 LOW VOLTAGE CMOS STATIC RAM |
| 中文描述： | 32K X 8 STANDARD SRAM, 45 ns, PDSO28 |
| 封裝： | 0.330 MM, PLASTIC, SOP-28 |
| 文件頁(yè)數(shù)： | 1/14頁(yè) |
| 文件大?。?/td> | 113K |
| 代理商： | IS65LV256AL-45UA3 |
當(dāng)前第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)第14頁(yè)
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. A
03/17/06
1
ISSI
Copyright 2006 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability
arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any
published information and before placing orders for products.
IS65LV256AL
IS62LV256AL
FEATURES
High-speed access time: 20, 45 ns
Automatic power-down when chip is deselected
CMOS low power operation
— 17 μW (typical) CMOS standby
— 50 mW (typical) operating
TTL compatible interface levels
Single 3.3V power supply
Fully static operation: no clock or refresh
required
Three-state outputs
Industrial and Automotive temperatures avail-
able
Lead-free available
DESCRIPTION
The
ISSI
IS62/65LV256AL is a very high-speed, low
power, 32,768-word by 8-bit static RAM. It is fabricated
using
ISSI
's high-performance CMOS technology. This
highly reliable process coupled with innovative circuit
design techniques, yields access times as fast as 15 ns
maximum.
When
CE
is HIGH (deselected), the device assumes a
standby mode at which the power dissipation is reduced to
150 μW (typical) with CMOS input levels.
Easy memory expansion is provided by using an active
LOW Chip Enable (
CE
). The active LOW Write Enable
(
WE
) controls both writing and reading of the memory.
The IS62/65LV256AL is available in the JEDEC standard
28-pin SOJ, 28-pin SOP, and the 28-pin 450-mil TSOP
package.
32K x 8 LOW VOLTAGE
CMOS STATIC RAM
FUNCTIONAL BLOCK DIAGRAM
A0-A14
CE
OE
WE
32K x 8
MEMORY ARRAY
DECODER
COLUMN I/O
CONTROL
CIRCUIT
GND
VDD
I/O
DATA
CIRCUIT
I/O0-I/O7
MARCH 2006
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IS65LV256AL-45ULA3 | 32K x 8 LOW VOLTAGE CMOS STATIC RAM |
| IS65WV12816ALL | 128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM |
| IS65WV12816BLL | 128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM |
| IS65WV25616ALL | 256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAM |
| IS65WV25616ALL-70TA1 | 256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IS65LV256AL-45ULA3 | 制造商:ISSI 制造商全稱(chēng):Integrated Silicon Solution, Inc 功能描述:32K x 8 LOW VOLTAGE CMOS STATIC RAM |
| IS65S | 制造商:IDEC Corporation 功能描述:SENS.IND. 10-30VDC PNP NC |
| IS65WV102416BLL | 制造商:ISSI 制造商全稱(chēng):Integrated Silicon Solution, Inc 功能描述:1M x 16 HIGH-SPEED LOW POWER ASYNCHRONOUS CMOS STATIC RAM |
| IS65WV102416BLL-25MA3 | 制造商:ISSI 制造商全稱(chēng):Integrated Silicon Solution, Inc 功能描述:1M x 16 HIGH-SPEED LOW POWER ASYNCHRONOUS CMOS STATIC RAM |
| IS65WV102416BLL-25TA3 | 制造商:ISSI 制造商全稱(chēng):Integrated Silicon Solution, Inc 功能描述:1M x 16 HIGH-SPEED LOW POWER ASYNCHRONOUS CMOS STATIC RAM |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。