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參數(shù)資料
| 型號(hào)： | IS64C6416AL-15TA3 |
| 廠(chǎng)商： | INTEGRATED SILICON SOLUTION INC |
| 元件分類(lèi)： | DRAM |
| 英文描述： | 64K x 16 HIGH-SPEED CMOS STATIC RAM |
| 中文描述： | 64K X 16 STANDARD SRAM, 15 ns, PDSO44 |
| 封裝： | PLASTIC, TSOP2-44 |
| 文件頁(yè)數(shù)： | 1/17頁(yè) |
| 文件大?。?/td> | 92K |
| 代理商： | IS64C6416AL-15TA3 |
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Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. A
01/17/05
1
ISSI
Copyright 2005 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability
arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any
published information and before placing orders for products.
IS61C6416AL
IS62C6416AL
IS64C6416AL
IS65C6416AL
FEATURES
IS61C6416AL and IS64C6416AL
High-speed access time: 12 ns, 15ns
Low Active Power: 175 mW (typical)
Low Standby Power: 1 mW (typical)
CMOS standby
IS62C6416AL and IS65C6416AL
High-speed access time: 35 ns, 45ns
Low Active Power: 50 mW (typical)
Low Standby Power: 100 μW (typical)
CMOS standby
TTL compatible interface levels
Single 5V ± 10% power supply
Fully static operation: no clock or refresh
required
Available in 44-pin SOJ package and
44-pin TSOP (Type II)
Commercial, Industrial and Automotive tempera-
ture ranges available
Lead-free available
DESCRIPTION
The
ISSI
IS61C6416AL, IS62C6416AL, IS64C6416AL and
IS65C6416AL are high-speed, 1,048,576-bit static RAMs
organized as 65,536 words by 16 bits. They are fabricated
using
ISSI
's high-performance CMOS technology. This highly
reliable process coupled with innovative circuit design tech-
niques, yields access times as fast as 12 ns with low power
consumption.
When
CE
is HIGH (deselected), the device assumes a
standby mode at which the power dissipation can be reduced
down with CMOS input levels.
Easy memory expansion is provided by using Chip Enable
and Output Enable inputs,
CE
and
OE
. The active LOW Write
Enable (
WE
) controls both writing and reading of the memory.
A data byte allows Upper Byte (
UB
) and Lower Byte (
LB
)
access.
The IS61C6416AL, IS62C6416AL, IS64C6416AL and
IS65C6416AL are packaged in the JEDEC standard 44-pin
400-mil SOJ and 44-pin TSOP (Type II).
FUNCTIONAL BLOCK DIAGRAM
JANUARY 2005
A0-A15
CE
OE
WE
UB
LB
64K x 16
MEMORY ARRAY
DECODER
COLUMN I/O
CONTROL
CIRCUIT
GND
VDD
I/O
DATA
CIRCUIT
I/O0-I/O7
Lower Byte
I/O8-I/O15
Upper Byte
64K x 16 HIGH-SPEED CMOS STATIC RAM
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IS65C6416AL | 64K x 16 HIGH-SPEED CMOS STATIC RAM |
| IS65C6416AL-45KA3 | 64K x 16 HIGH-SPEED CMOS STATIC RAM |
| IS65C6416AL-45TA3 | 64K x 16 HIGH-SPEED CMOS STATIC RAM |
| IS62C6416AL-35K | 64K x 16 HIGH-SPEED CMOS STATIC RAM |
| IS62C6416AL-35KI | 64K x 16 HIGH-SPEED CMOS STATIC RAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IS64C6416AL-15TLA3 | 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 1M (64Kx16) 12ns Async 靜態(tài)隨機(jī)存取存儲(chǔ)器 5v RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪(fǎng)問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| IS64C6416AL-15TLA3-TR | 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 1M (64Kx16) 12ns Async 靜態(tài)隨機(jī)存取存儲(chǔ)器 5v RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪(fǎng)問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| IS64DK | 制造商:IDEC Corporation 功能描述:Inductive Sensor |
| IS64K | 制造商:IDEC Corporation 功能描述:SENS.IND. 10-30VDC PNP NO |
| IS64K1 | 制造商:IDEC Corporation 功能描述:SENS.IND. 10-30VDC PNP NO |
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