- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄239729 > IS61NVP12836B-200B3 (INTEGRATED SILICON SOLUTION INC) 128K X 36 ZBT SRAM, 3.1 ns, PBGA165 PDF資料下載
參數(shù)資料
| 型號： | IS61NVP12836B-200B3 |
| 廠商： | INTEGRATED SILICON SOLUTION INC |
| 元件分類： | SRAM |
| 英文描述： | 128K X 36 ZBT SRAM, 3.1 ns, PBGA165 |
| 封裝： | 13 X 15 MM, 1 MM PITCH, PLASTIC, BGA-165 |
| 文件頁數(shù)： | 1/29頁 |
| 文件大?。?/td> | 504K |
| 代理商： | IS61NVP12836B-200B3 |
當前第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁
Integrated Silicon Solution, Inc. — www.issi.com
1
Rev. D
09/10/07
Copyright 2006 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no
liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on
any published information and before placing orders for products.
IS61NLP12832B
IS61NLP12836B/IS61NVP12836B
IS61NLP25618A/IS61NVP25618A
FEATURES
100percentbusutilization
NowaitcyclesbetweenReadandWrite
Internalself-timedwritecycle
IndividualByteWriteControl
SingleR/W(Read/Write)controlpin
Clockcontrolled,registeredaddress,
data and control
Interleavedorlinearburstsequencecontrolus-
ing MODE input
Threechipenablesforsimpledepthexpansion
and address pipelining
PowerDownmode
Commondatainputsanddataoutputs
CKE pin to enable clock and suspend operation
JEDEC100-pinTQFP,165-ballPBGAand119-
ballPBGApackages
Powersupply:
NVP:Vdd 2.5V(±5%),Vddq2.5V(±5%)
NLP:Vdd3.3V(±5%),Vddq3.3V/2.5V(±5%)
Industrialtemperatureavailable
Lead-freeavailable
DESCRIPTION
The4Meg'NLP/NVP'productfamilyfeaturehigh-speed,
low-powersynchronousstaticRAMsdesignedtoprovide
aburstable,high-performance,'nowait'state,devicefor
networking and communications applications.They are
organizedas128Kwordsby32bits,128Kwordsby36
bits,and256Kwordsby18bits,fabricatedwith
ISSI's
advanced CMOS technology.
Incorporating a 'no wait' state feature, wait cycles are
eliminated when the bus switches from read to write, or
writetoread.Thisdeviceintegratesa2-bitburstcounter,
high-speedSRAMcore,andhigh-drivecapabilityoutputs
into a single monolithic circuit.
All synchronous inputs pass through registers are controlled
byapositive-edge-triggeredsingleclockinput.Operations
may be suspended and all synchronous inputs ignored
when Clock Enable, CKEisHIGH.Inthisstatetheinternal
device will hold their previous values.
AllRead,WriteandDeselectcyclesareinitiatedbytheADV
input.WhentheADVisHIGHtheinternalburstcounter
isincremented.Newexternaladdressescanbeloaded
whenADVisLOW.
Write cycles are internally self-timed and are initiated
by the rising edge of the clock inputs and when WE is
LOW.Separatebyteenablesallowindividualbytestobe
written.
Aburstmodepin(MODE)definestheorderoftheburst
sequence.WhentiedHIGH,theinterleavedburstsequence
isselected.WhentiedLOW,thelinearburstsequenceis
selected.
128K x 32, 128K x 36, and 256K x 18
4Mb, PIPELINE 'NO WAIT' STATE BUS SRAM
SEPTEMBER 2007
FAST ACCESS TIME
Symbol
Parameter
-250
-200
Units
tkq
ClockAccessTime
2.6
3.1
ns
tkc
CycleTime
4
5
ns
Frequency
250
200
MHz
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IDT7202SA120DB | 1K X 9 OTHER FIFO, 120 ns, CDIP28 |
| IDT7202SA25L8 | 1K X 9 OTHER FIFO, 25 ns, CQCC32 |
| IDT7202SA35SO8 | 1K X 9 OTHER FIFO, 35 ns, PDSO28 |
| ILUI-65656V-80SHXXX | 32K X 8 STANDARD SRAM, 80 ns, PDSO28 |
| ILCI-65656V-85SHXXX | 32K X 8 STANDARD SRAM, 85 ns, CDIP28 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IS61NVP204818A-166TQLI | 制造商:Integrated Silicon Solution Inc 功能描述: |
| IS61NVP25636A-200B2LI | 制造商:Integrated Silicon Solution Inc 功能描述: |
| IS61NVP25636A-200B3LI | 制造商:Integrated Silicon Solution Inc 功能描述: |
| IS61NVP25636A-200TQI | 功能描述:靜態(tài)隨機存取存儲器 8Mb 256Kx36 200Mhz 2.5v I/O RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| IS61NVP25636A-200TQI-TR | 功能描述:靜態(tài)隨機存取存儲器 8Mb 256Kx36 200Mhz 2.5v I/O RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。