- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄383120 > IS61LV51216-10T (Electronic Theatre Controls, Inc.) 512K x 16 HIGH SPEED ASYNCHRONOUS PDF資料下載
參數(shù)資料
| 型號(hào)： | IS61LV51216-10T |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | 512K x 16 HIGH SPEED ASYNCHRONOUS |
| 中文描述： | 為512k × 16高速異步 |
| 文件頁(yè)數(shù)： | 8/15頁(yè) |
| 文件大?。?/td> | 101K |
| 代理商： | IS61LV51216-10T |
第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)當(dāng)前第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)第14頁(yè)第15頁(yè)
8
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. B
03/10/05
IS61LV51216
ISSI
WRITE CYCLE SWITCHING CHARACTERISTICS
(1,3)
(Over Operating Range)
-8
-10
-12
Symbol
t
WC
t
SCE
t
AW
Parameter
Min. Max.
Min. Max.
Min. Max.
Unit
Write Cycle Time
8
—
10
—
12
—
ns
CE
to Write End
6.5
—
8
—
8
—
ns
Address Setup Time
to Write End
6.5
—
8
—
8
—
ns
t
HA
t
SA
t
PWB
t
PWE
1
t
PWE
2
t
SD
t
HD
t
HZWE
(2)
t
LZWE
(2)
Address Hold from Write End
0
—
0
—
0
—
ns
Address Setup Time
0
—
0
—
0
—
ns
LB
,
UB
Valid to End of Write
6.5
—
8
—
8
—
ns
WE
Pulse Width
6.5
—
8
—
8
—
ns
WE
Pulse Width (
OE
= LOW)
8.0
—
10
—
12
—
ns
Data Setup to Write End
5
—
6
—
6
—
ns
Data Hold from Write End
0
—
0
—
0
—
ns
WE
LOW to High-Z Output
—
3.5
—
5
—
6
ns
WE
HIGH to Low-Z Output
2
—
2
—
2
—
ns
Notes:
1. Test conditions assume signal transition times of 3 ns or less, timing reference levels of 1.5V, input pulse levels of 0V to
3.0V and output loading specified in Figure 1.
2. Tested with the load in Figure 2. Transition is measured ±500 mV from steady-state voltage. Not 100% tested.
3. The internal write time is defined by the overlap of CE LOW and UB or LB, and WE LOW. All signals must be in valid states
to initiate a Write, but any one can go inactive to terminate the Write. The Data Input Setup and Hold timing are referenced
to the rising or falling edge of the signal that terminates the write. Shaded area product in development
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IS61LV51216-10TI | 512K x 16 HIGH SPEED ASYNCHRONOUS |
| IS61LV51216-10TLI | 512K x 16 HIGH SPEED ASYNCHRONOUS |
| IS61LV51216-12T | 512K x 16 HIGH SPEED ASYNCHRONOUS |
| IS61LV51216-12TI | 512K x 16 HIGH SPEED ASYNCHRONOUS |
| IS61LV51216-8M | 512K x 16 HIGH SPEED ASYNCHRONOUS |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IS61LV51216-10TI | 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 8Mb 512Kx16 10ns 3.3v RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| IS61LV51216-10TI-TR | 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 8Mb 512Kx16 10ns 3.3v RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| IS61LV51216-10TLI | 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 8Mb 512Kx16 10ns Async 靜態(tài)隨機(jī)存取存儲(chǔ)器 3.3v RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| IS61LV51216-10TLI-TR | 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 8Mb 512Kx16 10ns Async 靜態(tài)隨機(jī)存取存儲(chǔ)器 3.3v RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| IS61LV51216-10T-TR | 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 8Mb 512Kx16 10ns 3.3v RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。