- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄377563 > IS61LV25616L-10LQI (INTEGRATED SILICON SOLUTION INC) 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY PDF資料下載
參數(shù)資料
| 型號(hào)： | IS61LV25616L-10LQI |
| 廠(chǎng)商： | INTEGRATED SILICON SOLUTION INC |
| 元件分類(lèi)： | DRAM |
| 英文描述： | 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY |
| 中文描述： | 256K X 16 STANDARD SRAM, 10 ns, PQFP44 |
| 封裝： | LQFP-44 |
| 文件頁(yè)數(shù)： | 1/11頁(yè) |
| 文件大小： | 74K |
| 代理商： | IS61LV25616L-10LQI |
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. B
06/28/02
1
IS61LV25616L
ISSI
Copyright 2002 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to
obtain the latest version of this device specification before relying on any published information and before placing orders for products.
FEATURES
High-speed access time:
— 10, 12, and 15 ns
Low Active Power
— Less than 90mA (typ.) Active Current
Low standby power:
— Less than 1 m
A
(typ.) CMOS standby
TTL compatible interface levels
Single 3.3V power supply
Fully static operation: no clock or refresh
required
Three state outputs
Data control for upper and lower bytes
Industrial temperature available
256K x 16 HIGH SPEED ASYNCHRONOUS
CMOS STATIC RAM WITH 3.3V SUPPLY
DESCRIPTION
The
ISSI
IS61LV25616L is a high-speed, 4,194,304-bit
static RAM organized as 262,144 words by 16 bits. It is
fabricated using
ISSI
's high-performance CMOS technol-
ogy. This highly reliable process coupled with innovative
circuit design techniques, yields high-performance and low
power consumption devices.
When
CE
is HIGH (deselected), the device assumes a
standby mode at which the power dissipation can be
reduced down with CMOS input levels.
Easy memory expansion is provided by using Chip Enable
and Output Enable inputs,
CE
and
OE
. The active LOW
Write Enable (
WE
) controls both writing and reading of the
memory.A data byte allows Upper Byte (
UB
) and Lower
Byte (
LB
) access.
The IS61LV25616L is packaged in the JEDEC standard
44-pin 400-mil SOJ, 44-pin TSOP Type II, 44-pin LQFP and
48-pin Mini BGA (8mm x 10mm).
FUNCTIONAL BLOCK DIAGRAM
A0-A17
CE
OE
WE
UB
LB
256K x 16
MEMORY ARRAY
DECODER
COLUMN I/O
CONTROL
CIRCUIT
GND
VCC
I/O
DATA
CIRCUIT
I/O0-I/O7
Lower Byte
I/O8-I/O15
Upper Byte
JUNE 2002
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IS61LV25616L-10T | 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY |
| IS61LV25616L-12KI | 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY |
| IS61LV25616L-12TI | 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY |
| IS61LV25616L-15K | 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY |
| IS61LV25616L-15KI | 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IS61LV25616L-10T | 制造商:ISSI 制造商全稱(chēng):Integrated Silicon Solution, Inc 功能描述:256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY |
| IS61LV25616L-12KI | 制造商:ISSI 制造商全稱(chēng):Integrated Silicon Solution, Inc 功能描述:256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY |
| IS61LV25616L-12TI | 制造商:ISSI 制造商全稱(chēng):Integrated Silicon Solution, Inc 功能描述:256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY |
| IS61LV25616L-15K | 制造商:ISSI 制造商全稱(chēng):Integrated Silicon Solution, Inc 功能描述:256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY |
| IS61LV25616L-15KI | 制造商:ISSI 制造商全稱(chēng):Integrated Silicon Solution, Inc 功能描述:256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。