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參數(shù)資料
| 型號： | IS61LPD51218A-200B2I |
| 廠商： | INTEGRATED SILICON SOLUTION INC |
| 元件分類： | DRAM |
| 英文描述： | 256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAM |
| 中文描述： | 512K X 18 CACHE SRAM, 3.1 ns, PBGA119 |
| 封裝： | 14 X 22 MM, 1MM PITCH, PLASTIC, BGA-119 |
| 文件頁數(shù)： | 1/32頁 |
| 文件大小： | 216K |
| 代理商： | IS61LPD51218A-200B2I |
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Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. A
05/09/05
1
ISSI
IS61VPD25636A IS61LPD25636A
IS61VPD51218A IS61LPD51218A
Copyright 2005 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability
arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any
published information and before placing orders for products.
FEATURES
Internal self-timed write cycle
Individual Byte Write Control and Global Write
Clock controlled, registered address, data and
control
Burst sequence control using MODE input
Three chip enable option for simple depth
expansion and address pipelining
Common data inputs and data outputs
Auto Power-down during deselect
Double cycle deselect
Snooze MODE for reduced-power standby
JTAG Boundary Scan for PBGA package
Power Supply
LPD: V
DD
3.3V + 5%, V
DDQ
3.3V/2.5V + 5%
VPD: V
DD
2.5V + 5%, V
DDQ
2.5V + 5%
JEDEC 100-Pin TQFP,
119-pin PBGA and 165-pin PBGA package
DESCRIPTION
The
ISSI
IS61LPD/VPD25636A and IS61LPD/VPD51218A
are high-speed, low-power synchronous static
RAMs
de-
signed to provide burstable,
high-performance
memory for
communication and networking applications. The IS61LPD/
VPD25636A is organized as 262,144 words by 36 bits, and
the IS61LPD/VPD51218A is organized as 524,288 words
by 18 bits. Fabricated with
ISSI
's advanced CMOS technol-
ogy, the device integrates a 2-bit burst counter, high-speed
SRAM core, and high-drive capability outputs into a single
monolithic circuit. All synchronous inputs pass through
registers controlled by a positive-edge-triggered single
clock input.
Write cycles are internally self-timed and are initiated by the
rising edge of the clock input. Write cycles can be one to four
bytes wide as controlled by the write control inputs.
Separate byte enables allow individual bytes to be written.
The byte write operation is performed by using the byte
write enable (
BWE
) input combined with one or more
individual byte write signals (
BWx
). In addition, Global
Write (
GW
) is available for writing all bytes at one time,
regardless of the byte write controls.
Bursts can be initiated with either
ADSP
(Address Status
Processor) or
ADSC
(Address Status Cache Controller)
input pins. Subsequent burst addresses can be generated
internally and controlled by the
ADV
(burst address
advance) input pin.
The mode pin is used to select the burst sequence order,
Linear burst is achieved when this pin is tied LOW.
Interleave burst is achieved when this pin is tied HIGH or
left floating.
256K x 36, 512K x 18
9 Mb SYNCHRONOUS PIPELINED,
DOUBLE CYCLE DESELECT STATIC RAM
MAY 2005
FAST ACCESS TIME
Symbol
t
KQ
t
KC
Parameter
Clock Access Time
Cycle Time
Frequency
250
2.6
4
250
200
3.1
5
200
Units
ns
ns
MHz
相關PDF資料 |
PDF描述 |
|---|---|
| IS61LPD51218A-200B3 | 256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAM |
| IS61LPD51218A-200B3I | 256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAM |
| IS61LPD51218A-200TQ | 256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAM |
| IS61LPD51218A-200TQI | 256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAM |
| IS61LPD51218A-250B2 | 256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAM |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| IS61LPD51218A-200B3 | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAM |
| IS61LPD51218A-200B3I | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAM |
| IS61LPD51218A-200TQ | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAM |
| IS61LPD51218A-200TQI | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAM |
| IS61LPD51218A-250B2 | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAM |
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