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參數(shù)資料
| 型號(hào)： | IS61C12816-20T |
| 廠商： | INTEGRATED SILICON SOLUTION INC |
| 元件分類： | DRAM |
| 英文描述： | 128K x 16 HIGH-SPEED CMOS STATIC RAM |
| 中文描述： | 128K X 16 STANDARD SRAM, 20 ns, PDSO44 |
| 封裝： | PLASTIC, TSOP2-44 |
| 文件頁(yè)數(shù)： | 1/8頁(yè) |
| 文件大小： | 102K |
| 代理商： | IS61C12816-20T |
IS61C12816
ISSI
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. A
12/19/00
1
FEATURES
High-speed access time: 12, 15, and 20 ns
CMOS low power operation
— 450 mW (typical) operating
TTL compatible interface levels
Single 5V ± 10% power supply
Fully static operation: no clock or refresh
required
Three state outputs
Industrial temperature available
Available in 44-pin SOJ package and
44-pin TSOP(II)
128K x 16 HIGH-SPEED CMOS STATIC RAM
DESCRIPTION
The
ISSI
IS61C12816 is a high-speed, 2,097,152-bit static
RAM organized as 131,072 words by 16 bits. It is fabricated
using
ISSI
's high-performance CMOS technology. This highly
reliable process coupled with innovative circuit design tech-
niques, yields access times as fast as 12 ns with low power
consumption.
When
CE
is HIGH (deselected), the device assumes a standby
mode at which the power dissipation can be reduced down
with CMOS input levels.
Easy memory expansion is provided by using Chip Enable
and Output Enable inputs,
CE
and
OE
. The active LOW Write
Enable (
WE
) controls both writing and reading of the memory.A
data byte allows Upper Byte (
UB
) and Lower Byte (
LB
) access.
The IS61C12816 is packaged in the JEDEC standard 44-pin
400-mil SOJ and 44-pin TSOP
(II)
.
FUNCTIONAL BLOCK DIAGRAM
DECEMBER 2000
ISSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any
errors which may appear in this publication. Copyright 2000, Integrated Silicon Solution, Inc.
A0-A16
CE
OE
WE
UB
LB
128K x 16
MEMORY ARRAY
DECODER
COLUMN I/O
CONTROL
CIRCUIT
GND
VCC
I/O
DATA
CIRCUIT
I/O0-I/O7
Lower Byte
I/O8-I/O15
Upper Byte
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IS61C12816-20TI | 128K x 16 HIGH-SPEED CMOS STATIC RAM |
| IS61C25616 | 256K X 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 5V SUPPLY |
| IS61C256AH | 32K x 8 High-Speed CMOS Static RAM(32K x 8 高速CMOS靜態(tài)RAM) |
| IS61C256AH-15NI | 32K x 8 HIGH-SPEED CMOS STATIC RAM |
| IS61C256AH-25NI | 32K x 8 HIGH-SPEED CMOS STATIC RAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IS61C12816-20TI | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:128K x 16 HIGH-SPEED CMOS STATIC RAM |
| IS61C180 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述: |
| IS61C256 | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:WRITE CYCLE SWITCHING CHARACTERISTICS |
| IS61C25616 | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:256K X 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 5V SUPPLY |
| IS61C25616AL | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:256K x 16 HIGH-SPEED CMOS STATIC RAM |
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