參數(shù)資料
型號(hào): IS42S32400A-10TL
廠商: INTEGRATED SILICON SOLUTION INC
元件分類: DRAM
英文描述: CABLE ASSEMBLY; SMA MALE RIGHT ANGLE TO; SMA FEMALE BULKHEAD; 50 OHM, PE-SR405FL (.085" RE-SHAPABLE); 18" CABLE LENGTH;
中文描述: 4M X 32 SYNCHRONOUS DRAM, 7 ns, PDSO86
封裝: LEAD FREE, PLASTIC, TSOP2-86
文件頁(yè)數(shù): 16/66頁(yè)
文件大?。?/td> 556K
代理商: IS42S32400A-10TL
ISSI
16
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
ADVANCED INFORMATION
Rev. 00A
06/01/02
IS42S81600A, IS42S16800A, IS42S32400A
IS42LS81600A, IS42LS16800A, IS42LS32400A
FUNCTIONAL TRUTH TABLE Continued:
Notes:
1. All entries assume that CKE is active (CKEn-1=CKEn=H).
2. Illegal to bank in specified states; Function may be legal in the bank indicated by Bank Address (BA), depending on the
state of that bank.
3. Illegal if tRCD is not satisfied.
4. Illegal if tRAS is not satisfied.
5. Must satisfy burst interrupt condition.
6. Must satisfy bus contention, bus turn around, and/or write recovery requirements.
7. Must mask preceding data which don’t satisfy tDPL.
8. Illegal if tRRD is not satisfied.
相關(guān)PDF資料
PDF描述
IS42S32400A-10TLI 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
IS42S16800A 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
IS42S16800A-6T 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
IS42S16800A-6TL 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
IS42S16800A-7T 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IS42S32400A-10TLI 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
IS42S32400A-6T 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
IS42S32400A-6TL 制造商:Integrated Silicon Solution Inc 功能描述:
IS42S32400A-6T-TR 制造商:Integrated Silicon Solution Inc 功能描述:DRAM Chip SDRAM 128M-Bit 4Mx32 3.3V 86-Pin TSOP-II T/R
IS42S32400A-7B 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM