參數(shù)資料
型號(hào)： IS42S16400B-7TL
廠(chǎng)商： Electronic Theatre Controls, Inc.
英文描述： 1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
中文描述： 1梅格位× 16位× 4銀行（64兆位）同步動(dòng)態(tài)RAM
文件頁(yè)數(shù)： 9/55頁(yè)
文件大小： 472K
代理商： IS42S16400B-7TL
IS42S16400B
ISSI
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. D
02/10/05
9
TRUTH TABLE – CURRENT STATE BANK n, COMMAND TO BANK m
(1-6)
CURRENT STATE
COMMAND (ACTION)
CS
RAS
CAS WE
Any
COMMAND INHIBIT (NOP/Continue previous operation)
H
X
X
X
NO OPERATION (NOP/Continue previous operation)
L
H
H
H
Idle
Any Command Otherwise Allowed to Bank m
X
X
X
X
Row
ACTIVE (Select and activate row)
L
L
H
H
Activating,
READ (Select column and start READ burst)
(7)
L
H
L
H
Active, or
WRITE (Select column and start WRITE burst)
(7)
L
H
L
L
Precharging
PRECHARGE
L
L
H
L
Read
ACTIVE (Select and activate row)
L
L
H
H
(Auto
READ (Select column and start new READ burst)
(7,10)
L
H
L
H
Precharge
WRITE (Select column and start WRITE burst)
(7,11)
L
H
L
L
Disabled)
PRECHARGE
(9)
L
L
H
L
Write
ACTIVE (Select and activate row)
L
L
H
H
(Auto
READ (Select column and start READ burst)
(7,12)
L
H
L
H
Precharge
WRITE (Select column and start new WRITE burst)
(7,13)
L
H
L
L
Disabled)
PRECHARGE
(9)
L
L
H
L
Read
ACTIVE (Select and activate row)
L
L
H
H
(With Auto
READ (Select column and start new READ burst)
(7,8,14)
L
H
L
H
Precharge)
WRITE (Select column and start WRITE burst)
(7,8,15)
L
H
L
L
PRECHARGE
(9)
L
L
H
L
Write
ACTIVE (Select and activate row)
L
L
H
H
(With Auto
READ (Select column and start READ burst)
(7,8,16)
L
H
L
H
Precharge)
WRITE (Select column and start new WRITE burst)
(7,8,17)
L
H
L
L
PRECHARGE
(9)
L
L
H
L
NOTE:
1. This table applies when CKE n-1 was HIGH and CKE n is HIGH (Truth Table - CKE) and after t
XSR
has been met (if the previous
state was self refresh).
2. This table describes alternate bank operation, except where noted; i.e., the current state is for bank n and the commands shown
are those allowed to be issued to bank m
(assuming that bank m s in such a state that the given command is allowable)
. Exceptions are
covered in the notes below.
3. Current state definitions:
Idle: The bank has been precharged, and t
RP
has been met.
Row Active: A row in the bank has been activated, and t
RCD
has been met. No data bursts/accesses and no register
accesses are in progress.
Read: A READ burst has been initiated, with auto precharge disabled, and has not yet terminated or been terminated.
Write: A WRITE burst has been initiated, with auto precharge disabled, and has not yet terminated or been terminated.
Read w/Auto
Precharge Enabled:
Starts with registration of a READ command with auto precharge enabled, and ends when t
RP
has been met.
Once t
RP
is met, the bank will be in the idle state.
Write w/Auto
Precharge Enabled:
Starts with registration of a WRITE command with auto precharge enabled, and ends when t
RP
has been
met. Once t
RP
is met, the bank will be in the idle state.
4. AUTO REFRESH, SELF REFRESH and LOAD MODE REGISTER commands may only be issued when all banks are idle.
5. A BURST TERMINATE command cannot be issued to another bank; it applies to the bank represented by the current state only.
6. All states and sequences not shown are illegal or reserved.
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參數(shù)描述
IS42S16400B-7TLI 制造商:Integrated Silicon Solution Inc 功能描述:
IS42S16400B-7TLI-TR 制造商:Integrated Silicon Solution Inc 功能描述:
IS42S16400B-7TL-TR 制造商:Integrated Silicon Solution Inc 功能描述:
IS42S16400C1 制造商:ISSI 制造商全稱(chēng):Integrated Silicon Solution, Inc 功能描述:1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
IS42S16400C1-6T 制造商:ISSI 制造商全稱(chēng):Integrated Silicon Solution, Inc 功能描述:1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
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